Neutron transmutation doped (Ntd) germanium thermistors for sub-Mm bolometer applications

Conference · Sun Sep 01 00:00:00 EDT 1996

OSTI ID:414416

Haller, E E ^[1]; Itoh, K M ^[2]; Beeman, J W ^[3]

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1. Univ. of California, Berkeley, CA (United States)
2. Keio Univ., Yokohama (Japan). Dept. of Instrumental Engineering
3. Lawrence Berkeley National Lab., CA (United States). Engineering Div.

The authors report on recent advances in the development of Neutron Transmutation Doped (NTD) semiconductor thermistors fabricated from germanium of natural and controlled isotopic composition. The near ideal doping uniformity which can be achieved with the NTD process, the device simplicity of NTD Ge thermistors and the high performance of cooled junction field effect transistor (FET) preamplifiers have led to the widespread acceptance of these thermal sensors in many radiotelescopes operating on the ground, on high altitude aircraft and on spaceborne satellites. These features also have made possible the development of efficient bolometer arrays which are beginning to produce exciting results.

• Research Organization: Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
• Sponsoring Organization: National Aeronautics and Space Administration, Washington, DC (United States); USDOE Office of Energy Research, Washington, DC (United States)
• DOE Contract Number: AC03-76SF00098
• OSTI ID: 414416
• Report Number(s): LBNL-38912; CONF-9609287-1; ON: DE97001250; CNN: Contract W14606; W16404; W16164; W17605; TRN: AHC29701%%115
• Resource Relation: Conference: 30. ESLAB symposium on submillimetre and far-infrared space instrumentation, Noordwijk (Netherlands), 24-26 Sep 1996; Other Information: PBD: Sep 1996
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
BOLOMETERS
THERMISTORS
DESIGN
FABRICATION
CRYSTAL DOPING
ELECTRIC CONDUCTIVITY
TEMPERATURE DEPENDENCE