Integrated electro-optic intracavity frequency modulation of double- heterostructure injection laser

Journal Article · Sat Nov 15 00:00:00 EST 1975 · Appl. Phys. Lett., v. 27, no. 10, pp. 532-534

DOI:https://doi.org/10.1063/1.88296· OSTI ID:4138106

Reinhart, F K; Logan, R A

Integration of a taper-coupled GaAs-Al/subx/Ga/sub 1 - x/As laser with a linear electro-optic modulator permits efficient optical frequency modulation of the laser emission. The pulsed room-temperature threshold current density of the device was 8 kA/cm$sup 2$. Frequency modulation depth in excess of 15 GHz (corresponding to a wavelength shift of 0.4 A) was obtained with a reverse bias change of 20 V across the modulator. Conversion of frequency modulation into intensity modulation was demonstrated with a characteristic power P$sub 0$ of 10 $mu$W/MHz for 90% intensity modulation. It is shown that reduction of P$sub 0$ by an order of magnitude is easily feasible.

• Research Organization: Bell Laboratories, Murray Hill, New Jersey 07974
• Sponsoring Organization: USDOE
• NSA Number: NSA-33-002872
• OSTI ID: 4138106
• Journal Information: Appl. Phys. Lett., v. 27, no. 10, pp. 532-534, Other Information: Orig. Receipt Date: 30-JUN-76
• Country of Publication: United States
• Language: English

Related Subjects

N42210* -Engineering-Facilities & Equipment-Lasers
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*SEMICONDUCTOR LASERS- MODULATION
ALUMINIUM ARSENIDES
CAVITY RESONATORS
EFFICIENCY
EPITAXY
GALLIUM ARSENIDES
OPERATION
STABILIZATION
THRESHOLD ENERGY
TUNING
WAVEGUIDES