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Title: Effect of the silica growth mode on the mechanisms of damage by ionizing radiation in MOS structures (in French)

Authors:
;
Publication Date:
Research Org.:
CNRS, Toulouse, France
OSTI Identifier:
4132537
NSA Number:
NSA-33-009396
Resource Type:
Conference
Resource Relation:
Conference: Conference on evaluation of the effect of the space environment on materials, Toulouse, France, 17 Jun 1974; Other Information: Orig. Receipt Date: 30-JUN-76; Bib. Info. Source: IAA (International Aerospace Abstr.); Related Information: Evaluation of the effect of the space environment on materials
Country of Publication:
France
Language:
French
Subject:
N46300* -Instrumentation-Radiation Effects on Instrument Components, Instruments, or Electronic Systems; 440200* -Instrumentation-Radiation Effects on Instrument Components, Instruments, or Electronic Systems; *MOS TRANSISTORS- PHYSICAL RADIATION EFFECTS; ELECTRODES; MOISTURE; RADIOSENSITIVITY

Citation Formats

Sarrabayrouse, G, and Buxo, J. Effect of the silica growth mode on the mechanisms of damage by ionizing radiation in MOS structures. France: N. p., 1974. Web.
Sarrabayrouse, G, & Buxo, J. Effect of the silica growth mode on the mechanisms of damage by ionizing radiation in MOS structures. France.
Sarrabayrouse, G, and Buxo, J. 1974. "Effect of the silica growth mode on the mechanisms of damage by ionizing radiation in MOS structures". France.
@article{osti_4132537,
title = {Effect of the silica growth mode on the mechanisms of damage by ionizing radiation in MOS structures},
author = {Sarrabayrouse, G and Buxo, J},
abstractNote = {},
doi = {},
url = {https://www.osti.gov/biblio/4132537}, journal = {},
number = ,
volume = ,
place = {France},
year = {Tue Jan 01 00:00:00 EST 1974},
month = {Tue Jan 01 00:00:00 EST 1974}
}

Conference:
Other availability
Please see Document Availability for additional information on obtaining the full-text document. Library patrons may search WorldCat to identify libraries that hold this conference proceeding.

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