Effect of the silica growth mode on the mechanisms of damage by ionizing radiation in MOS structures (in French)
- Authors:
- Publication Date:
- Research Org.:
- CNRS, Toulouse, France
- OSTI Identifier:
- 4132537
- NSA Number:
- NSA-33-009396
- Resource Type:
- Conference
- Resource Relation:
- Conference: Conference on evaluation of the effect of the space environment on materials, Toulouse, France, 17 Jun 1974; Other Information: Orig. Receipt Date: 30-JUN-76; Bib. Info. Source: IAA (International Aerospace Abstr.); Related Information: Evaluation of the effect of the space environment on materials
- Country of Publication:
- France
- Language:
- French
- Subject:
- N46300* -Instrumentation-Radiation Effects on Instrument Components, Instruments, or Electronic Systems; 440200* -Instrumentation-Radiation Effects on Instrument Components, Instruments, or Electronic Systems; *MOS TRANSISTORS- PHYSICAL RADIATION EFFECTS; ELECTRODES; MOISTURE; RADIOSENSITIVITY
Citation Formats
Sarrabayrouse, G, and Buxo, J. Effect of the silica growth mode on the mechanisms of damage by ionizing radiation in MOS structures. France: N. p., 1974.
Web.
Sarrabayrouse, G, & Buxo, J. Effect of the silica growth mode on the mechanisms of damage by ionizing radiation in MOS structures. France.
Sarrabayrouse, G, and Buxo, J. 1974.
"Effect of the silica growth mode on the mechanisms of damage by ionizing radiation in MOS structures". France.
@article{osti_4132537,
title = {Effect of the silica growth mode on the mechanisms of damage by ionizing radiation in MOS structures},
author = {Sarrabayrouse, G and Buxo, J},
abstractNote = {},
doi = {},
url = {https://www.osti.gov/biblio/4132537},
journal = {},
number = ,
volume = ,
place = {France},
year = {Tue Jan 01 00:00:00 EST 1974},
month = {Tue Jan 01 00:00:00 EST 1974}
}
Other availability
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