Radiation-induced surface states in MOS devices

Conference · Mon Dec 01 00:00:00 EST 1975 · IEEE Trans. Nucl. Sci., v. NS-22, no. 6, pp. 2193-2196

OSTI ID:4090092

Kjar, R A; Nichols, D K

The fact that ionizing radiation causes an increase in both oxide charge and fast surface-state density in MOS devices is well known. The relative role of each damage mechanism in total threshold voltage change with radiation, however, is not always apparent. For example, n-channel MOS transistors using a silicon dioxide gate insulator often show a reversal in the direction of the threshold shift after 10$sup 5$ to 10$sup 6$ rads(Si) total dose. This reversal could be due to a reduced net oxide charge or an increase in the interface-state density, or some combination of both mechanisms. This paper describes a series of radiation experiments on MOS capacitors which define, in greater detail, the nature of radiation-induced surface states, their dependence on radiation dose and bias, and their dependence on the MOS fabrication process. (auth)

• Research Organization: Rockwell International, Anaheim, CA
• NSA Number: NSA-33-020333
• OSTI ID: 4090092
• Journal Information: IEEE Trans. Nucl. Sci., v. NS-22, no. 6, pp. 2193-2196, Conference: Annual conference on nuclear and space radiation effects, Arcata, CA, 14 Jul 1975; Other Information: Orig. Receipt Date: 30-JUN-76
• Country of Publication: United States
• Language: English

Related Subjects

N46300* -Instrumentation-Radiation Effects on Instrument Components
Instruments
or Electronic Systems
440200* -Instrumentation-Radiation Effects on Instrument Components
Instruments
or Electronic Systems
*MOS TRANSISTORS- PHYSICAL RADIATION EFFECTS
ANNEALING
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
FABRICATION
SURFACE PROPERTIES