Advanced GTO development

Eriksson, L O; Barrow, J

Title: Advanced GTO development

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Abstract

This report was initiated to leapfrog existing technology by developing the buried grid version of the gate-turn-off (GTO) thyristor. Considerable challenges were encountered and overcome. Experiments conducted at the GE Static Power Components Operation led to consideration of a GTO thyristor with a mesa-like structure. This GTO was produced using conventional thyristor processing steps and a lower temperature, high lifetime oxidation system. A computer program was written to optimize diffusion profiles, resulting in the lowest ``P`` sheet resistance with an 18 to 25 V cathode avalanche. These new diffusion profiles and a new island design resulted in a new GTO device operating at 15 V gate with ``higher spike`` voltage capability and a lower snubber capacitor and at inherently lower cost. Samples were delivered to the US Army, Fort Monmouth, New Jersey in 1989, and to GE Corporate Research & Development in 1990. The initial step towards commercialization was marked by an order from Westinghouse Science and Technology Center, Pittsburgh, Pennsylvania.

Authors:

Eriksson, L O; Barrow, J ^[1]

General Electric Co., Malvern, PA (United States)

Publication Date:: Tue Oct 01 00:00:00 EDT 1996

Research Org.:: Electric Power Research Inst. (EPRI), Palo Alto, CA (United States)

Sponsoring Org.:: Electric Power Research Inst., Palo Alto, CA (United States)

OSTI Identifier:: 408386

Report Number(s):: EPRI-TR-107012

Resource Type:: Technical Report

Resource Relation:: Other Information: PBD: Oct 1996

Country of Publication:: United States

Language:: English

Subject:: 24 POWER TRANSMISSION AND DISTRIBUTION; 42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES; THYRISTORS; TESTING; ELECTRIC UTILITIES; DESIGN; PERFORMANCE; PROCESSING; MASKING; OXIDATION; DIFFUSION COATING; ALUMINIUM; GALLIUM; BORON; MATERIALS TESTING; IRRADIATION; GETTERING; SERVICE LIFE; EXPERIMENTAL DATA; AC SYSTEMS; HVDC SYSTEMS; SEMICONDUCTOR MATERIALS

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                    Eriksson, L O, and Barrow, J. Advanced GTO development.  United States: N. p., 1996. 
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                    Eriksson, L O, & Barrow, J. Advanced GTO development.  United States.

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                    Eriksson, L O, and Barrow, J. 1996.  
        "Advanced GTO development".  United States.

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@article{osti_408386,

  title        = {Advanced GTO development},

  author       = {Eriksson, L O and Barrow, J},

  abstractNote = {This report was initiated to leapfrog existing technology by developing the buried grid version of the gate-turn-off (GTO) thyristor. Considerable challenges were encountered and overcome. Experiments conducted at the GE Static Power Components Operation led to consideration of a GTO thyristor with a mesa-like structure. This GTO was produced using conventional thyristor processing steps and a lower temperature, high lifetime oxidation system. A computer program was written to optimize diffusion profiles, resulting in the lowest ``P`` sheet resistance with an 18 to 25 V cathode avalanche. These new diffusion profiles and a new island design resulted in a new GTO device operating at 15 V gate with ``higher spike`` voltage capability and a lower snubber capacitor and at inherently lower cost. Samples were delivered to the US Army, Fort Monmouth, New Jersey in 1989, and to GE Corporate Research & Development in 1990. The initial step towards commercialization was marked by an order from Westinghouse Science and Technology Center, Pittsburgh, Pennsylvania.},

  doi          = {},

  url          = {https://www.osti.gov/biblio/408386},
  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {Tue Oct 01 00:00:00 EDT 1996},

  month        = {Tue Oct 01 00:00:00 EDT 1996}

}

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