IN-PILE IRRADIATION EFFECTS ON SEMICONDUCTOR SWITCHES. Milestone Summary Report, Task 51140-2
Technical Report
·
OSTI ID:4068849
The test circuitry for the irradiation testing of gallium arsenide tunnel diodes and GE C35 silicon-controlled rectifiers is shown. The test circuitry and the results of an irradiation test of silicon and germanium tunnel diodes are given. The silicon tunnel diodes were still usable (peakto-valley ratio of 2) at 10/sup 16/ nvt fast neutrons. The germanium tunnel diodes were still useful (peak-to-valley ratio of 2) at 10/sup 17/ nvt. Both were tested at reactor ambient temperature. (auth)
- Research Organization:
- General Electric Co. Aircraft Nuclear Propulsion Dept., Cincinnati
- DOE Contract Number:
- AF33(600)-38062; AT(11-1)-171
- NSA Number:
- NSA-15-013432
- OSTI ID:
- 4068849
- Report Number(s):
- TID-11556; XDC-60-12-123
- Resource Relation:
- Other Information: Orig. Receipt Date: 31-DEC-61
- Country of Publication:
- United States
- Language:
- English
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