Formation of bound excitons by photoexcited carriers in {ital p}-type GaAs revealed by picosecond luminescence spectroscopy

Journal Article · Sun Dec 01 00:00:00 EST 1996 · Physical Review, B: Condensed Matter

DOI:https://doi.org/10.1103/PhysRevB.54.17591· OSTI ID:404055

Kumar, R; Vengurlekar, A S; Prabhu, S S ^[1]; De Franceschi, S; Beltram, F ^[2]

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1. Tata Institute of Fundamental Research, Bombay 400005 (India)
2. Scuola Normale Superiore and Istituto Nazionale per la Fisica della Materia, I-56126 Pisa (Italy)

We report on the time evolution of photoluminescence (PL) spectra in molecular-beam-epitaxy grown {ital p}-type GaAs ({ital p}=5{times}10{sup 16} cm{sup {minus}3}), following electron-hole pair excitation by picosecond laser pulses at densities of about 6{times}10{sup 16} cm{sup {minus}3}. We perform both upconversion (UC) and photoexcitation-correlation (PEC) PL measurements for delays up to 1 ns. The UC and PEC PL results imply significant formation of bound excitons by electron-hole pairs in less than 1 ns. {copyright} {ital 1996 The American Physical Society.}

• OSTI ID: 404055
• Journal Information: Physical Review, B: Condensed Matter, Vol. 54, Issue 24; Other Information: PBD: Dec 1996
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
66 PHYSICS
GALLIUM ARSENIDES
PHOTOLUMINESCENCE
MOLECULAR BEAM EPITAXY
P-TYPE CONDUCTORS
EXCITONS
LASER RADIATION
ELECTRON-HOLE DROPLETS
TIME RESOLUTION
PS RANGE