Binding energy of vacancies to clusters formed in Si by high-energy ion implantation
Measurements of the binding energy (E{sub b}) of vacancies to vacancy clusters formed in silicon following high-energy ion implantation are reported. Vacancy clusters were created by 2 MeV, 2 x 10{sup 15} cm{sup -2} dose Si implant and annealing. To prevent recombination of the excess vacancies (V{sup ex}) with interstitials from the implant damage near the projected range (R{sub p}), a Si-on-insulator substrate was used such that the R{sub p} damage was separated from the V{sup ex} by the buried oxide (BOX). Two V{sup ex} regions were observed: one in the middle of the top Si layer (V{sub 1}{sup ex}) and the other at the front Si/BOX interface (V{sub 2}{sup ex}). The rates of vacancy evaporation were directly measured by Au labeling following thermal treatments at temperatures between 800 and 900 C for times ranging from 600 to 1800 s. The rate of vacancy evaporation from V{sub 2}{sup ex} was observed to be greater than from V{sub 1}{sup ex}. The binding energy of vacancies to clusters in the middle of the silicon top layer was 3.2{+-}0.2 eV as determined from the kinetics for vacancy evaporation.
- Research Organization:
- Oak Ridge National Laboratory
- Sponsoring Organization:
- (US)
- DOE Contract Number:
- AC05-00OR22725
- OSTI ID:
- 40277738
- Journal Information:
- Applied Physics Letters, Vol. 79, Issue 13; Other Information: DOI: 10.1063/1.1405814; Othernumber: APPLAB000079000013001983000001; 045139APL; PBD: 24 Sep 2001; ISSN 0003-6951
- Publisher:
- The American Physical Society
- Country of Publication:
- United States
- Language:
- English
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