Multiaxial channeling study of disorder accumulation and recovery in gold-irradiated 6H-SiC
Single crystal 6H-SiC has been irradiated 60{sup o} off normal with 2 MeV Au{sup 2+} ions at 300 K to fluences of 0.029, 0.058, and 0.12 ions/nm2, which produced relatively low damage levels. The disorder profiles as a function of ion fluence on both the Si and C sublattices have been determined simultaneously in situ using Rutherford backscattering and nuclear reaction analysis with 0.94 MeV D{sup +} ions in channeling geometry along the <0001>, <1{bar 1}02>, and <10{bar 1}1> axes. Along the <0001> axis at these low doses, similar levels of Si and C disorder are observed, and the damage accumulation is linear with dose. However, along <1{bar 1}02> and <10{bar 1}1>, the disorder accumulation is larger and increases sublinearly with dose. Furthermore, a higher level of C disorder than Si disorder is observed along the <1{bar 1}02> and <10{bar 1}1> axes, which is consistent with a smaller threshold displacement energy on the C sublattice in SiC. The mean lattice displacement, perpendicular to each corresponding axis, ranges from 0.014 to 0.037 nm for this range of ion fluences. A steady accumulation of small displacements due to lattice stress is observed along the <10{bar 1}1> axis, and a detectable reduction of the lattice stress perpendicular to the <0001> axis occurs at 0.12 Au{sup 2+}/nm{sup 2}. There is only a moderate recovery of disorder, produced at and below 0.058 Au{sup 2+}/nm{sup 2}, during thermal annealing at 570 K; more significant recovery is observed for 0.12 Au{sup 2+}/nm{sup 2} along both the <0001> and <1{bar 1}02> axes.
- Sponsoring Organization:
- (US)
- DOE Contract Number:
- AC 06-76RLO 1830
- OSTI ID:
- 40277621
- Journal Information:
- Physical Review B, Vol. 64, Issue 12; Other Information: DOI: 10.1103/PhysRevB.64.125206; Othernumber: PRBMDO000064000012125206000001; 032136PRB; PBD: 15 Sep 2001; ISSN 0163-1829
- Publisher:
- The American Physical Society
- Country of Publication:
- United States
- Language:
- English
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