Silicon Antisite in 4H SiC
Journal Article
·
· Physical Review Letters
Electron paramagnetic resonance spectrum with C{sub 3V} symmetry and a spin S=1/2 has been observed in p -type, electron-irradiated 4H SiC. Based on the observed {sup 29}Si hyperfine structures it is suggested that the defect is the isolated silicon antisite (Si{sub C}) . The spin S=1/2 and the observation of the defect only in p -type material suggest that the Si{sub C } is in the positive-charge state. A strong temperature dependence of the g value and hyperfine coupling constant of the Si{sub C }{sup +} center indicates a considerable lattice relaxation in the vicinity of the defect.
- Sponsoring Organization:
- (US)
- OSTI ID:
- 40277193
- Journal Information:
- Physical Review Letters, Vol. 87, Issue 4; Other Information: DOI: 10.1103/PhysRevLett.87.045502; Othernumber: PRLTAO000087000004045502000001; 011130PRL; PBD: 23 Jul 2001; ISSN 0031-9007
- Publisher:
- The American Physical Society
- Country of Publication:
- United States
- Language:
- English
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