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Title: Two-Atom Structures of Ge on Si(100): Dimers versus Adatom Pairs

Abstract

We present an ab initio study of the properties of structures composed of two and four Ge atoms adsorbed on the troughs of the Si(100) surface, and we conclude that these structures are all composed of dimers, with a chemical bonding between the adatoms. We compare our calculated local density of states with scanning tunneling microscope (STM) images, and we show that these Ge dimers adsorbed on the troughs between the substrate dimer rows can be identified with the adatom pairs observed experimentally. We also show that the local buckling of the substrate dimers can give rise to similar structures with very different STM images.

Authors:
; ;
Publication Date:
Sponsoring Org.:
(US)
OSTI Identifier:
40277117
Resource Type:
Journal Article
Journal Name:
Physical Review Letters
Additional Journal Information:
Journal Volume: 87; Journal Issue: 3; Other Information: DOI: 10.1103/PhysRevLett.87.036104; Othernumber: PRLTAO000087000003036104000001; 014130PRL; PBD: 16 Jul 2001; Journal ID: ISSN 0031-9007
Publisher:
The American Physical Society
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ATOMS; BONDING; BUCKLING; DIMERS; MICROSCOPES; SUBSTRATES; TUNNELING

Citation Formats

da Silva, Antonio J. R., Dalpian, G M, Janotti, A, and Fazzio, A. Two-Atom Structures of Ge on Si(100): Dimers versus Adatom Pairs. United States: N. p., 2001. Web. doi:10.1103/PhysRevLett.87.036104.
da Silva, Antonio J. R., Dalpian, G M, Janotti, A, & Fazzio, A. Two-Atom Structures of Ge on Si(100): Dimers versus Adatom Pairs. United States. doi:10.1103/PhysRevLett.87.036104.
da Silva, Antonio J. R., Dalpian, G M, Janotti, A, and Fazzio, A. Mon . "Two-Atom Structures of Ge on Si(100): Dimers versus Adatom Pairs". United States. doi:10.1103/PhysRevLett.87.036104.
@article{osti_40277117,
title = {Two-Atom Structures of Ge on Si(100): Dimers versus Adatom Pairs},
author = {da Silva, Antonio J. R. and Dalpian, G M and Janotti, A and Fazzio, A},
abstractNote = {We present an ab initio study of the properties of structures composed of two and four Ge atoms adsorbed on the troughs of the Si(100) surface, and we conclude that these structures are all composed of dimers, with a chemical bonding between the adatoms. We compare our calculated local density of states with scanning tunneling microscope (STM) images, and we show that these Ge dimers adsorbed on the troughs between the substrate dimer rows can be identified with the adatom pairs observed experimentally. We also show that the local buckling of the substrate dimers can give rise to similar structures with very different STM images.},
doi = {10.1103/PhysRevLett.87.036104},
journal = {Physical Review Letters},
issn = {0031-9007},
number = 3,
volume = 87,
place = {United States},
year = {2001},
month = {7}
}