Electron-electron relaxation effect on Auger recombination in direct-band semiconductors
Journal Article
·
· Physical Review B
Influence of electron-electron relaxation processes on Auger recombination rate in direct band semiconductors is investigated. Comparison between carrier-carrier and carrier-phonon relaxation processes is provided. It is shown that relaxation processes are essential if the free path length of carriers does not exceed a certain critical value, which exponentially increases with temperature. For illustration of obtained results a typical InGaAsP compound is used.
- Sponsoring Organization:
- (US)
- OSTI ID:
- 40230901
- Journal Information:
- Physical Review B, Vol. 64, Issue 7; Other Information: DOI: 10.1103/PhysRevB.64.073205; Othernumber: PRBMDO000064000007073205000001; 078131PRB; PBD: 15 Aug 2001; ISSN 0163-1829
- Publisher:
- The American Physical Society
- Country of Publication:
- United States
- Language:
- English
Similar Records
Auger recombination in a degenerate electron-hole plasma in InGaAsP solid solutions
Universal size dependence of auger constants in direct- and indirect-gap semiconductor nanocrystals
Electron-phonon relaxation and excited electron distribution in gallium nitride
Journal Article
·
Tue Mar 01 00:00:00 EST 1983
· Sov. Phys. - Semicond. (Engl. Transl.); (United States)
·
OSTI ID:40230901
Universal size dependence of auger constants in direct- and indirect-gap semiconductor nanocrystals
Journal Article
·
Tue Jan 01 00:00:00 EST 2008
· Nature Physics
·
OSTI ID:40230901
+2 more
Electron-phonon relaxation and excited electron distribution in gallium nitride
Journal Article
·
Sun Aug 28 00:00:00 EDT 2016
· Journal of Applied Physics
·
OSTI ID:40230901