Ultrathin fluorinated silicon nitride gate dielectric films formed by remote plasma enhanced chemical vapor deposition employing NH{sub 3} and SiF{sub 4}
Ultrathin fluorinated silicon nitride (SiN{sub x}) films of 4 nm in thickness were formed on a Si substrate at 350{sup o}C in the downflow of electron cyclotron resonance plasma-enhanced chemical vapor deposition employing ammonia and tetrafluorosilane (NH{sub 3}/SiF{sub 4}) gases. Ultrathin fluorinated SiN{sub x} film was evaluated for use as a gate dielectric film. The observed properties indicated an extremely low leakage current, one order of magnitude lower than thermal SiO{sub 2} of identical equivalent oxide thickness, as well as an excellent hysteresis loop (20 mV) and interface trap density (D{sub it}=4 x 10{sup 11}cm{sup -2}) in the capacitance--voltage characteristics. The film structures and the surface reactions for the fluorinated SiN{sub x} film formation were examined via in situ x-ray photoelectron spectroscopy. in situ Fourier-transform infrared reflection absorption spectroscopy, in situ atomic force microscopy, and thermal desorption mass spectroscopy. The control of the fluorine concentration in the SiN{sub x} films was found to be a key factor in the formation of fluorinated SiN{sub x} films of high quality at low temperatures. Fluorinated SiN{sub x} is the effective material for application in ultrathin gate dielectric film in ultralarge-scale integrated circuits. {copyright} 2001 American Institute of Physics.
- Sponsoring Organization:
- (US)
- OSTI ID:
- 40230563
- Journal Information:
- Journal of Applied Physics, Vol. 90, Issue 4; Other Information: DOI: 10.1063/1.1381556; Othernumber: JAPIAU000090000004001955000001; 055115JAP; PBD: 15 Aug 2001; ISSN 0021-8979
- Publisher:
- The American Physical Society
- Country of Publication:
- United States
- Language:
- English
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