Step bunching on the vicinal GaN(0001) surface
Nominally 2{sup o} vicinal GaN(0001) surfaces exhibit monolayer-height steps at 990{sup o}C in the metal-organic chemical vapor deposition environment. Real-time x-ray scattering observations at 715--990{sup o}C indicate that there is a tendency for step bunching during growth. Below 850{sup o}C, step bunches nucleated during growth remain and coarsen after growth, while above 850{sup o}C, the surface reverts to monolayer-height steps after growth. Surfaces vicinal toward the {l_brace}1{bar 1}00{r_brace} and the {l_brace}11{bar 2}0{r_brace} planes exhibit similar behavior. We suggest a simple equilibrium surface orientational phase diagram for vicinal GaN(0001) that is consistent with these observations.
- Research Organization:
- Argonne National Laboratory (ANL), Argonne, IL
- Sponsoring Organization:
- (US)
- OSTI ID:
- 40205626
- Journal Information:
- Physical Review B, Vol. 62, Issue 16; Other Information: DOI: 10.1103/PhysRevB.62.R10661; Othernumber: PRBMDO000062000016R10661000001; R02040PRB; PBD: 15 Oct 2000; ISSN 0163-1829
- Publisher:
- The American Physical Society
- Country of Publication:
- United States
- Language:
- English
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