Dimer-flipping-assisted diffusion on a Si(001) surface

doi:https://doi.org/10.1063/1.1336167

Title: Dimer-flipping-assisted diffusion on a Si(001) surface

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Abstract

The binding sites and diffusion pathways of Si adatoms on a c(4x2) reconstructed Si(001) surface are investigated by a tight-binding method with an environment-dependent silicon potential in conjunction with ab initio calculations using the Car--Parrinello method. A new diffusion pathway along the trough edge driven by dimer flipping is found with a barrier of 0.74 eV, comparable to that of 0.68 eV along the top of the dimer rows.

Authors:: Zi, J; Min, B J; Lu, Y; Wang, C Z; Ho, K M

Publication Date:: 2000-12-18

Sponsoring Org.:: (US)

OSTI Identifier:: 40205334

Resource Type:: Journal Article

Journal Name:: Applied Physics Letters

Additional Journal Information:: Journal Volume: 77; Journal Issue: 25; Other Information: DOI: 10.1063/1.1336167; Othernumber: APPLAB000077000025004184000001; 034101APL; PBD: 18 Dec 2000; Journal ID: ISSN 0003-6951

Publisher:: The American Physical Society

Country of Publication:: United States

Language:: English

Subject:: 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; DIFFUSION; DIMERS; PHYSICS; SILICON

Citation Formats


                    Zi, J, Min, B J, Lu, Y, Wang, C Z, and Ho, K M. Dimer-flipping-assisted diffusion on a Si(001) surface.  United States: N. p., 2000. 
        Web.  doi:10.1063/1.1336167.

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                    Zi, J, Min, B J, Lu, Y, Wang, C Z, & Ho, K M. Dimer-flipping-assisted diffusion on a Si(001) surface.  United States.  https://doi.org/10.1063/1.1336167

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                    Zi, J, Min, B J, Lu, Y, Wang, C Z, and Ho, K M. Mon .  
        "Dimer-flipping-assisted diffusion on a Si(001) surface".  United States.  https://doi.org/10.1063/1.1336167.

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@article{osti_40205334,

  title        = {Dimer-flipping-assisted diffusion on a Si(001) surface},

  author       = {Zi, J and Min, B J and Lu, Y and Wang, C Z and Ho, K M},

  abstractNote = {The binding sites and diffusion pathways of Si adatoms on a c(4x2) reconstructed Si(001) surface are investigated by a tight-binding method with an environment-dependent silicon potential in conjunction with ab initio calculations using the Car--Parrinello method. A new diffusion pathway along the trough edge driven by dimer flipping is found with a barrier of 0.74 eV, comparable to that of 0.68 eV along the top of the dimer rows.},

  doi          = {10.1063/1.1336167},

  url          = {https://www.osti.gov/biblio/40205334},
  journal      = {Applied Physics Letters},

  issn         = {0003-6951},

  number       = 25,

  volume       = 77,

  place        = {United States},

  year         = {2000},

  month        = {12}

}

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https://doi.org/10.1063/1.1336167

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