Do grain boundaries assist S diffusion in polycrystalline CdS/CdTe heterojunctions?
We report on a transmission electron microscopy and energy-dispersive x-ray spectroscopy study of S diffusion in polycrystalline CdS/CdTe heterojunctions. We find that grain boundaries significantly assist S diffusion in the CdTe layer when the CdTe is grown without the presence of oxygen, i.e., the S diffuses more easily along the grain boundaries than in the grains. However, grain boundaries do not enhance the S diffusion in CdTe when it is grown in the presence of oxygen. The reason is likely to be the formation of Cd--O bonds at the grain boundaries, which are resistance to the S diffusion.
- Sponsoring Organization:
- (US)
- OSTI ID:
- 40205259
- Journal Information:
- Applied Physics Letters, Vol. 78, Issue 2; Other Information: DOI: 10.1063/1.1338969; Othernumber: APPLAB000078000002000171000001; 009103APL; PBD: 8 Jan 2001; ISSN 0003-6951
- Publisher:
- The American Physical Society
- Country of Publication:
- United States
- Language:
- English
Similar Records
S–Te Interdiffusion within Grains and Grain Boundaries in CdTe Solar Cells
Computational design of passivants for CdTe grain boundaries
High fidelity polycrystalline CdTe/CdS heterostructures via molecular dynamics
Journal Article
·
Fri Sep 19 00:00:00 EDT 2014
· IEEE Journal of Photovoltaics
·
OSTI ID:40205259
+5 more
Computational design of passivants for CdTe grain boundaries
Journal Article
·
Mon Sep 06 00:00:00 EDT 2021
· Solar Energy Materials and Solar Cells
·
OSTI ID:40205259
+6 more
High fidelity polycrystalline CdTe/CdS heterostructures via molecular dynamics
Journal Article
·
Tue Jun 20 00:00:00 EDT 2017
· MRS Advances
·
OSTI ID:40205259
+1 more