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Title: Interdiffusion of CdS and Zn{sub 2}SnO{sub 4} layers and its application in CdS/CdTe polycrystalline thin-film solar cells

Abstract

In this work, we found that the interdiffusion of the CdS and Zn{sub 2}SnO{sub 4} (ZTO) layers can occur either at high temperature (550--650{sup o}C) in Ar or at lower temperature (400--420{sup o}C) in a CdCl{sub 2} atmosphere. By integrating a Zn{sub 2}SnO{sub 4} film into a CdS/CdTe solar cell as a buffer layer, this interdiffusion feature can solve several critical issues and improve device performance and reproducibility of both SnO{sub 2}-based and Cd{sub 2}SnO{sub 4}-based CdTe cells. Interdiffusion consumes the CdS film from both the ZTO and CdTe sides during the device fabrication process and improves quantum efficiency at short wavelengths. The ZTO film acts as a Zn source to alloy with the CdS film, which results in increases in the band gap of the window layer and in short-circuit current density J{sub sc}. Interdiffusion can also significantly improve device adhesion after CdCl{sub 2} treatment, thus providing much greater process latitude when optimizing the CdCl{sub 2} process step. The optimum CdCl{sub 2}-treated CdTe device has high quantum efficiency at long wavelength, because of its good junction properties and well-passivated CdTe film. We have fabricated a Cd{sub 2}SnO{sub 4}/Zn{sub 2}SnO{sub 4}/CdS/CdTe cell demonstrating an NREL-confirmed total-area efficiency of 15.8% (V{submore » oc}=844.3mV, J{sub sc}=25.00mA/cm{sup 2}, and fill factor=74.82%). This high-performance cell is one of the best thin-film CdTe solar cells in the world.« less

Authors:
; ; ; ; ; ;
Publication Date:
Sponsoring Org.:
(US)
OSTI Identifier:
40204943
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 89; Journal Issue: 8; Other Information: DOI: 10.1063/1.1351539; Othernumber: JAPIAU000089000008004564000001; 043107JAP; PBD: 15 Apr 2001; Journal ID: ISSN 0021-8979
Publisher:
The American Physical Society
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; ADHESION; ALLOYS; BUFFERS; CURRENT DENSITY; EFFICIENCY; FABRICATION; PERFORMANCE; QUANTUM EFFICIENCY; SOLAR CELLS; WAVELENGTHS

Citation Formats

Wu, X, Asher, S, Levi, D H, King, D E, Yan, Y, Gessert, T A, and Sheldon, P. Interdiffusion of CdS and Zn{sub 2}SnO{sub 4} layers and its application in CdS/CdTe polycrystalline thin-film solar cells. United States: N. p., 2001. Web. doi:10.1063/1.1351539.
Wu, X, Asher, S, Levi, D H, King, D E, Yan, Y, Gessert, T A, & Sheldon, P. Interdiffusion of CdS and Zn{sub 2}SnO{sub 4} layers and its application in CdS/CdTe polycrystalline thin-film solar cells. United States. doi:10.1063/1.1351539.
Wu, X, Asher, S, Levi, D H, King, D E, Yan, Y, Gessert, T A, and Sheldon, P. Sun . "Interdiffusion of CdS and Zn{sub 2}SnO{sub 4} layers and its application in CdS/CdTe polycrystalline thin-film solar cells". United States. doi:10.1063/1.1351539.
@article{osti_40204943,
title = {Interdiffusion of CdS and Zn{sub 2}SnO{sub 4} layers and its application in CdS/CdTe polycrystalline thin-film solar cells},
author = {Wu, X and Asher, S and Levi, D H and King, D E and Yan, Y and Gessert, T A and Sheldon, P},
abstractNote = {In this work, we found that the interdiffusion of the CdS and Zn{sub 2}SnO{sub 4} (ZTO) layers can occur either at high temperature (550--650{sup o}C) in Ar or at lower temperature (400--420{sup o}C) in a CdCl{sub 2} atmosphere. By integrating a Zn{sub 2}SnO{sub 4} film into a CdS/CdTe solar cell as a buffer layer, this interdiffusion feature can solve several critical issues and improve device performance and reproducibility of both SnO{sub 2}-based and Cd{sub 2}SnO{sub 4}-based CdTe cells. Interdiffusion consumes the CdS film from both the ZTO and CdTe sides during the device fabrication process and improves quantum efficiency at short wavelengths. The ZTO film acts as a Zn source to alloy with the CdS film, which results in increases in the band gap of the window layer and in short-circuit current density J{sub sc}. Interdiffusion can also significantly improve device adhesion after CdCl{sub 2} treatment, thus providing much greater process latitude when optimizing the CdCl{sub 2} process step. The optimum CdCl{sub 2}-treated CdTe device has high quantum efficiency at long wavelength, because of its good junction properties and well-passivated CdTe film. We have fabricated a Cd{sub 2}SnO{sub 4}/Zn{sub 2}SnO{sub 4}/CdS/CdTe cell demonstrating an NREL-confirmed total-area efficiency of 15.8% (V{sub oc}=844.3mV, J{sub sc}=25.00mA/cm{sup 2}, and fill factor=74.82%). This high-performance cell is one of the best thin-film CdTe solar cells in the world.},
doi = {10.1063/1.1351539},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 8,
volume = 89,
place = {United States},
year = {2001},
month = {4}
}