Epitaxial Sc{sub 1-x}Ti{sub x}N(001): Optical and electronic transport properties
Single crystalline Sc{sub 1-x}Ti{sub x}N layers, with compositions spanning the entire range (0{<=}x{le}1), were grown on MgO(001) by ultrahigh vacuum reactive magnetron sputter deposition at 750{sup o}C. Optical transmission and reflectivity spectra are well described by a Drude--Lorentz model. The optical carrier density N{sup *} increases linearly from 1.0x10{sup 21} for ScN to 4.6x10{sup 22} cm{sup -3} for TiN while the room-temperature electrical resistivity {rho}{sub 300K} varies by more than 2 orders of magnitude, from 2x10{sup -3} {Omega}cm for ScN to 13 {mu}{Omega}cm for TiN. {rho}{sub 300K} agrees well with optically determined resistivity values for alloys with compositions up to x=0.66, corresponding to the onset of electron filling in the second and third conduction bands. We calculated ScN and TiN band structures by ab initio density functional methods and used the results to simulate the field responses of free carriers in the Sc{sub 1-x}Ti{sub x}N layers. From this, we determined, in combination with the measured temperature dependence of the resistivity, the low-temperature carrier relaxation time {tau}(x). The composition dependence of {tau} is dominated by alloy scattering and agrees well with our measured optical results. Hall experiments were used to obtain the effective carrier density N{sub eff}(x) which increases linearly with x up to x=0.4. N{sub eff}(x) is relatively flat for alloy compositions between x=0.4 and 0.7, due to anisotropies in the conduction band, and exhibits a steep increase at x>0.7 as higher lying conduction bands begin to be occupied. Our simulated Sc{sub 1-x}Ti{sub x}N electronic transport properties are in good agreement with experiment. Interband optical absorption results can also be understood based upon the calculated band structures.
- Sponsoring Organization:
- (US)
- OSTI ID:
- 40204904
- Journal Information:
- Journal of Applied Physics, Vol. 89, Issue 1; Other Information: DOI: 10.1063/1.1329348; Othernumber: JAPIAU000089000001000401000001; 104101JAP; PBD: 1 Jan 2001; ISSN 0021-8979
- Publisher:
- The American Physical Society
- Country of Publication:
- United States
- Language:
- English
Similar Records
Band Gap Adjustment in Perovskite-type Eu 1-x Ca x TiO 3 via Ammonolysis
Transition metal elements as donor dopants in CdO