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Title: Picosecond Z-scan measurements on bulk GaN crystals

Abstract

Bulk GaN crystals were characterized by using picosecond laser pulses at {lambda}=0.527{mu}m and Z-scan techniques. The role of the free-carrier absorption was evaluated by a dynamical, pump-and-probe-type transmitivity measurement. The values of two-photon absorption coefficient (17{endash}20 cm/GW) and refractive index changes at high optical irradiances due to bound (n{sub 2}={minus}4{times}10{sup {minus}12}esu) and free ({sigma}{sub r}={minus}1.0{times}10{sup {minus}20}cm{sup 3}) electrons in that material were determined. {copyright} 2001 American Institute of Physics.

Authors:
; ; ; ; ;
Publication Date:
Sponsoring Org.:
(US)
OSTI Identifier:
40204572
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 78; Journal Issue: 26; Other Information: DOI: 10.1063/1.1380248; Othernumber: APPLAB000078000026004118000001; 038125APL; PBD: 25 Jun 2001; Journal ID: ISSN 0003-6951
Publisher:
The American Physical Society
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ABSORPTION; ELECTRONS; LASERS; PHYSICS; REFRACTIVE INDEX

Citation Formats

Pacebutas, V, Stalnionis, A, Krotkus, A, Suski, T, Perlin, P, and Leszczynski, M. Picosecond Z-scan measurements on bulk GaN crystals. United States: N. p., 2001. Web. doi:10.1063/1.1380248.
Pacebutas, V, Stalnionis, A, Krotkus, A, Suski, T, Perlin, P, & Leszczynski, M. Picosecond Z-scan measurements on bulk GaN crystals. United States. doi:10.1063/1.1380248.
Pacebutas, V, Stalnionis, A, Krotkus, A, Suski, T, Perlin, P, and Leszczynski, M. Mon . "Picosecond Z-scan measurements on bulk GaN crystals". United States. doi:10.1063/1.1380248.
@article{osti_40204572,
title = {Picosecond Z-scan measurements on bulk GaN crystals},
author = {Pacebutas, V and Stalnionis, A and Krotkus, A and Suski, T and Perlin, P and Leszczynski, M},
abstractNote = {Bulk GaN crystals were characterized by using picosecond laser pulses at {lambda}=0.527{mu}m and Z-scan techniques. The role of the free-carrier absorption was evaluated by a dynamical, pump-and-probe-type transmitivity measurement. The values of two-photon absorption coefficient (17{endash}20 cm/GW) and refractive index changes at high optical irradiances due to bound (n{sub 2}={minus}4{times}10{sup {minus}12}esu) and free ({sigma}{sub r}={minus}1.0{times}10{sup {minus}20}cm{sup 3}) electrons in that material were determined. {copyright} 2001 American Institute of Physics.},
doi = {10.1063/1.1380248},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 26,
volume = 78,
place = {United States},
year = {2001},
month = {6}
}