Spatially modified layer properties related to the formation of gallium droplets on GaN(0001) surfaces during plasma-assisted molecular-beam epitaxy
The surface morphology and the spatial distribution of defect-related luminescence of GaN(0001) layers grown by plasma-assisted molecular-beam epitaxy under gallium-rich conditions has been investigated. Droplets of liquid gallium form on the surface during growth and lead to distinct spiral hillocks under the droplet. The droplets are surrounded by extended voids which point to an incomplete gallium adlayer on the GaN surface during growth at the droplet boundary. Cathodoluminescence spectra indicate an enhanced intensity in the yellow spectral range for the GaN under the droplets which is attributed to a change in the local density of point defects in the layer. {copyright} 2001 American Institute of Physics.
- Sponsoring Organization:
- (US)
- OSTI ID:
- 40204296
- Journal Information:
- Applied Physics Letters, Vol. 78, Issue 24; Other Information: DOI: 10.1063/1.1377629; Othernumber: APPLAB000078000024003827000001; 029123APL; PBD: 11 Jun 2001; ISSN 0003-6951
- Publisher:
- The American Physical Society
- Country of Publication:
- United States
- Language:
- English
Similar Records
Gallium desorption kinetics on (0001) GaN surface during the growth of GaN by molecular-beam epitaxy
Continuous evolution of Ga adlayer coverages during plasma-assisted molecular-beam epitaxy of (0001) GaN