Low resistive p-type GaN using two-step rapid thermal annealing processes
Two-step thermal annealing processes were investigated for electrical activation of magnesium- doped galliumnitride layers. The samples were studied by room-temperature Hall measurements and photoluminescence spectroscopy at 16 K. After an annealing process consisting of a short-term step at 960{degree}C followed by a 600{degree}C dwell step for 5 min a resistivity as low as 0.84 {Omega}cm is achieved for the activated sample, which improves the results achieved by standard annealing (800{degree}C for 10 min) by 25% in resistivity and 100% in free hole concentration. Photoluminescence shows a peak centered at 3.0 eV, which is typical for Mg-doped samples with high free hole concentrations.{copyright} 2001 American Institute of Physics.
- Sponsoring Organization:
- (US)
- OSTI ID:
- 40204269
- Journal Information:
- Journal of Applied Physics, Vol. 89, Issue 12; Other Information: DOI: 10.1063/1.1371934; Othernumber: JAPIAU000089000012008339000001; 059112JAP; PBD: 15 Jun 2001; ISSN 0021-8979
- Publisher:
- The American Physical Society
- Country of Publication:
- United States
- Language:
- English
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