Carrier separation measurement of leakage current under prebreakdown in ultrathin SiO{sub 2} films
Journal Article
·
· Journal of Applied Physics
The anomalously large gate leakage current observed prior to dielectric breakdown in electrically stressed n{sup +} gate p metal{endash}oxide{endash}semiconductor field-effect transistors is investigated. Carrier separation measurements reveal that the leakage currents are electron tunneling current, and in some cases are accompanied by noticeable hole-related current at low gate voltages. Experimental results demonstrate the close correlation between this phenomenon and soft breakdown in terms of current{endash}voltage characteristics. {copyright} 2001 American Institute of Physics.
- Sponsoring Organization:
- (US)
- OSTI ID:
- 40204268
- Journal Information:
- Journal of Applied Physics, Vol. 89, Issue 12; Other Information: DOI: 10.1063/1.1370087; Othernumber: JAPIAU000089000012008336000001; 018112JAP; PBD: 15 Jun 2001; ISSN 0021-8979
- Publisher:
- The American Physical Society
- Country of Publication:
- United States
- Language:
- English
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