Impact of exposure induced refractive index changes of photoresists on the photolithographic process
Journal Article
·
· Journal of Applied Physics
In many commercial and noncommercial photoresists the real and the imaginary parts of the refractive index are changed during exposure. Using a finite-difference beam-propagation algorithm, we analyze the impact of these nonlinear optical effects on the photolithographic process. Changes of the real part of the refractive index have a considerable impact on dose latitudes, sidewalls, swing curves, iso-dense bias and other process parameters. These effects become more dominant as the thickness of the resist layer increases. {copyright} 2001 American Institute of Physics.
- Sponsoring Organization:
- (US)
- OSTI ID:
- 40204243
- Journal Information:
- Journal of Applied Physics, Vol. 89, Issue 12; Other Information: DOI: 10.1063/1.1359165; Othernumber: JAPIAU000089000012008163000001; 053109JAP; PBD: 15 Jun 2001; ISSN 0021-8979
- Publisher:
- The American Physical Society
- Country of Publication:
- United States
- Language:
- English
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