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Title: Interfacial reactions in epitaxial Al/TiN(111) model diffusion barriers: Formation of an impervious self-limited wurtzite-structure AIN(0001) blocking layer

Abstract

Single-crystal TiN(111) layers, 45 nm thick, were grown on MgO(111) by ultrahigh vacuum reactive magnetron sputter deposition in pure N{sub 2} discharges at T{sub s}=700{degree}C. Epitaxial Al(111) overlayers, 160 nm thick, were then deposited at T{sub s}=100{degree}C in Ar without breaking vacuum. Interfacial reactions and changes in bilayer microstructure due to annealing at 620 and 650{degree}C were investigated using x-ray diffraction and transmission electron microscopy (TEM). The interfacial regions of samples annealed at 620{degree}C consist of continuous {approx_equal}7-nm-thick epitaxial wurtzite-structure AlN(0001) layers containing a high density of stacking faults, with {approx_equal}22 nm thick tetragonal Al{sub 3}Ti(112) overlayers. Surprisingly, samples annealed at the higher temperature are more stable against Al{sub 3}Ti formation. TEM analyses of bilayers annealed at 650{degree}C (10{degree}C below the Al melting point!) reveal only the self-limited growth of an {approx_equal}3-nm-thick interfacial layer of perfect smooth epitaxial wurtzite-structure AlN(0001) which serves as an extremely effective deterrent for preventing further interlayer reactions. {copyright} 2001 American Institute of Physics.

Authors:
; ; ; ; ; ;
Publication Date:
Sponsoring Org.:
(US)
OSTI Identifier:
40204189
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 89; Journal Issue: 12; Other Information: DOI: 10.1063/1.1372162; Othernumber: JAPIAU000089000012007841000001; 083112JAP; PBD: 15 Jun 2001; Journal ID: ISSN 0021-8979
Publisher:
The American Physical Society
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; DEPLETION LAYER; DIFFUSION BARRIERS; STACKING FAULTS; TIN 111; TRANSMISSION ELECTRON MICROSCOPY; ULTRAHIGH VACUUM; X-RAY DIFFRACTION

Citation Formats

Chun, J -S, Desjardins, P, Lavoie, C, Shin, C -S, Cabral, C, Petrov, I, and Greene, J E. Interfacial reactions in epitaxial Al/TiN(111) model diffusion barriers: Formation of an impervious self-limited wurtzite-structure AIN(0001) blocking layer. United States: N. p., 2001. Web. doi:10.1063/1.1372162.
Chun, J -S, Desjardins, P, Lavoie, C, Shin, C -S, Cabral, C, Petrov, I, & Greene, J E. Interfacial reactions in epitaxial Al/TiN(111) model diffusion barriers: Formation of an impervious self-limited wurtzite-structure AIN(0001) blocking layer. United States. doi:10.1063/1.1372162.
Chun, J -S, Desjardins, P, Lavoie, C, Shin, C -S, Cabral, C, Petrov, I, and Greene, J E. Fri . "Interfacial reactions in epitaxial Al/TiN(111) model diffusion barriers: Formation of an impervious self-limited wurtzite-structure AIN(0001) blocking layer". United States. doi:10.1063/1.1372162.
@article{osti_40204189,
title = {Interfacial reactions in epitaxial Al/TiN(111) model diffusion barriers: Formation of an impervious self-limited wurtzite-structure AIN(0001) blocking layer},
author = {Chun, J -S and Desjardins, P and Lavoie, C and Shin, C -S and Cabral, C and Petrov, I and Greene, J E},
abstractNote = {Single-crystal TiN(111) layers, 45 nm thick, were grown on MgO(111) by ultrahigh vacuum reactive magnetron sputter deposition in pure N{sub 2} discharges at T{sub s}=700{degree}C. Epitaxial Al(111) overlayers, 160 nm thick, were then deposited at T{sub s}=100{degree}C in Ar without breaking vacuum. Interfacial reactions and changes in bilayer microstructure due to annealing at 620 and 650{degree}C were investigated using x-ray diffraction and transmission electron microscopy (TEM). The interfacial regions of samples annealed at 620{degree}C consist of continuous {approx_equal}7-nm-thick epitaxial wurtzite-structure AlN(0001) layers containing a high density of stacking faults, with {approx_equal}22 nm thick tetragonal Al{sub 3}Ti(112) overlayers. Surprisingly, samples annealed at the higher temperature are more stable against Al{sub 3}Ti formation. TEM analyses of bilayers annealed at 650{degree}C (10{degree}C below the Al melting point!) reveal only the self-limited growth of an {approx_equal}3-nm-thick interfacial layer of perfect smooth epitaxial wurtzite-structure AlN(0001) which serves as an extremely effective deterrent for preventing further interlayer reactions. {copyright} 2001 American Institute of Physics.},
doi = {10.1063/1.1372162},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 12,
volume = 89,
place = {United States},
year = {2001},
month = {6}
}