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Title: Longitudinal bias method using a long distance exchange coupling field in tunnel magnetoresistance junctions

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.1357122· OSTI ID:40204055

A longitudinal bias method using a long distance exchange coupling field, which was observed between an IrMn layer and a NiFe/CoFe bilayer across a Cu interlayer, has been investigated for magnetic read heads. The exchange coupling field could be changed in the layered film consisting of Ta/NiFe/Cu(0, 1.0, 1.5, 2.0 nm)/IrMn. In order to align the easy axes of the free and pinned ferromagnetic layers perpendicular to each other, a two-step annealing process was carried out to rotate the easy axis of the free layer in the tunnel magnetoresistive read heads. The angle between the two easy axes was 72{degree} in the junction after an optimized two-step annealing. The tunnel magnetoresistive readers, which have a resistance{times}area product of about 2000 {Omega}{mu}m2 and a tunnel magnetoresistance ratio of about 15%, showed an output voltage of 9080{mu}V{sub p{minus}p} and 2270{mu}V{sub p{minus}p}/{mu}m, which was comparable to that of a typical giant magnetoresistive reader for a 7.5 Gbits/in.2 hard disk drive. {copyright} 2001 American Institute of Physics.

Sponsoring Organization:
(US)
OSTI ID:
40204055
Journal Information:
Journal of Applied Physics, Vol. 89, Issue 11; Other Information: DOI: 10.1063/1.1357122; Othernumber: JAPIAU000089000011007356000001; 260111MMM; PBD: 1 Jun 2001; ISSN 0021-8979
Publisher:
The American Physical Society
Country of Publication:
United States
Language:
English

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