Spin polarized tunneling as a probe for quantitative analysis of field dependent domain structure in magnetic tunnel junctions
Micromagnetic features appearing during the reversal of an artificial ferrimagnet used as a hard layer of a magnetic tunnel junction are quantitatively analyzed using the high sensitivity of the spin polarized tunnel current to magnetization fluctuations in the electrodes of the magnetic junctions. We propose an analytical model which takes into account different tunneling paths associated with local magnetization configurations. The model allows a quantitative correlation between the spin polarized transport characteristics and the field-dependent domain structure. The results extracted from the tunnel magnetoresistance measurements are found to be in good agreement with the magnetic domain wall density extracted from magnetic force microscopy experiments. {copyright} 2001 American Institute of Physics.
- Sponsoring Organization:
- (US)
- OSTI ID:
- 40203833
- Journal Information:
- Journal of Applied Physics, Vol. 89, Issue 11; Other Information: DOI: 10.1063/1.1361044; Othernumber: JAPIAU000089000011006668000001; 450111MMM; PBD: 1 Jun 2001; ISSN 0021-8979
- Publisher:
- The American Physical Society
- Country of Publication:
- United States
- Language:
- English
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