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Title: Dielectric response in narrow-gap semiconductor quantum wells in a magnetic field

Abstract

A multiband theory of the dielectric response in a quasi-two dimensional (Q2D) electron plasma of narrow-gap semiconductor structures in an external magnetic field has been developed. The strong interband mixing plays an essential role in the determination of the shape and behavior of the dielectric response in narrow-band Q2D systems. We have used a full 8{times}8 {dot k}p Hamiltonian model to describe the Landau levels. A rigorous theoretical analysis shows, among other interesting features, that spin{endash}flip-like intrasubband transitions are allowed and its effects on the related optical properties of Q2D systems are investigated. The influence of the Landau level filling factor on the dielectric response and the limit of integer and fractional filling factors cases are discussed. We found that the occupation of Landau levels modulates the polarizability strength of the plasma. {copyright} 2001 American Institute of Physics.

Authors:
; ;
Publication Date:
Sponsoring Org.:
(US)
OSTI Identifier:
40203773
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 89; Journal Issue: 11; Other Information: DOI: 10.1063/1.1368179; Othernumber: JAPIAU000089000011006400000001; 053111JAP; PBD: 1 Jun 2001; Journal ID: ISSN 0021-8979
Publisher:
The American Physical Society
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; DIELECTRIC MATERIALS; ELECTRONS; HAMILTONIANS; MAGNETIC FIELDS; OCCUPATIONS; OPTICAL PROPERTIES; PHYSICS; PLASMA; POLARIZABILITY; SHAPE

Citation Formats

Lopez-Richard, V, Marques, G E, and Trallero-Giner, C. Dielectric response in narrow-gap semiconductor quantum wells in a magnetic field. United States: N. p., 2001. Web. doi:10.1063/1.1368179.
Lopez-Richard, V, Marques, G E, & Trallero-Giner, C. Dielectric response in narrow-gap semiconductor quantum wells in a magnetic field. United States. doi:10.1063/1.1368179.
Lopez-Richard, V, Marques, G E, and Trallero-Giner, C. Fri . "Dielectric response in narrow-gap semiconductor quantum wells in a magnetic field". United States. doi:10.1063/1.1368179.
@article{osti_40203773,
title = {Dielectric response in narrow-gap semiconductor quantum wells in a magnetic field},
author = {Lopez-Richard, V and Marques, G E and Trallero-Giner, C},
abstractNote = {A multiband theory of the dielectric response in a quasi-two dimensional (Q2D) electron plasma of narrow-gap semiconductor structures in an external magnetic field has been developed. The strong interband mixing plays an essential role in the determination of the shape and behavior of the dielectric response in narrow-band Q2D systems. We have used a full 8{times}8 {dot k}p Hamiltonian model to describe the Landau levels. A rigorous theoretical analysis shows, among other interesting features, that spin{endash}flip-like intrasubband transitions are allowed and its effects on the related optical properties of Q2D systems are investigated. The influence of the Landau level filling factor on the dielectric response and the limit of integer and fractional filling factors cases are discussed. We found that the occupation of Landau levels modulates the polarizability strength of the plasma. {copyright} 2001 American Institute of Physics.},
doi = {10.1063/1.1368179},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 11,
volume = 89,
place = {United States},
year = {2001},
month = {6}
}