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Title: Self-annihilation of antiphase boundaries in GaAs epilayers on Ge substrates grown by metal-organic vapor-phase epitaxy

Abstract

The self-annihilation of antiphase boundaries (APBs) in GaAs epitaxial layers grown by low-pressure metal-organic vapor-phase epitaxy on Ge substrates is studied by several characterization techniques. Cross-sectional transmission electron microscopy shows that antiphase domain free GaAs growth on Ge was possible due to the proper selection of the growth parameters. The antiphase boundaries annihilate with each other after a thick 3 {mu}m layer of GaAs growth on a Ge substrate as observed by scanning electron microscopy studies. Double crystal x-ray diffraction data shows a slight compression of GaAs on Ge, and the full width at half maximum decreases with increasing growth temperatures. This confirms that the APBs annihilate inside the GaAs epitaxial films. Low temperature photoluminescence measurements confirm the self-annihilation of the APBs at low temperature growth and the generation of APBs at higher growth temperatures. {copyright} 2001 American Institute of Physics.

Authors:
;
Publication Date:
Sponsoring Org.:
(US)
OSTI Identifier:
40203706
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 89; Journal Issue: 11; Other Information: DOI: 10.1063/1.1368870; Othernumber: JAPIAU000089000011005972000001; 072111JAP; PBD: 1 Jun 2001; Journal ID: ISSN 0021-8979
Publisher:
The American Physical Society
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; COMPRESSION; EPITAXY; PHOTOLUMINESCENCE; PHYSICS; SCANNING ELECTRON MICROSCOPY; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; X-RAY DIFFRACTION

Citation Formats

Hudait, M K, and Krupanidhi, S B. Self-annihilation of antiphase boundaries in GaAs epilayers on Ge substrates grown by metal-organic vapor-phase epitaxy. United States: N. p., 2001. Web. doi:10.1063/1.1368870.
Hudait, M K, & Krupanidhi, S B. Self-annihilation of antiphase boundaries in GaAs epilayers on Ge substrates grown by metal-organic vapor-phase epitaxy. United States. doi:10.1063/1.1368870.
Hudait, M K, and Krupanidhi, S B. Fri . "Self-annihilation of antiphase boundaries in GaAs epilayers on Ge substrates grown by metal-organic vapor-phase epitaxy". United States. doi:10.1063/1.1368870.
@article{osti_40203706,
title = {Self-annihilation of antiphase boundaries in GaAs epilayers on Ge substrates grown by metal-organic vapor-phase epitaxy},
author = {Hudait, M K and Krupanidhi, S B},
abstractNote = {The self-annihilation of antiphase boundaries (APBs) in GaAs epitaxial layers grown by low-pressure metal-organic vapor-phase epitaxy on Ge substrates is studied by several characterization techniques. Cross-sectional transmission electron microscopy shows that antiphase domain free GaAs growth on Ge was possible due to the proper selection of the growth parameters. The antiphase boundaries annihilate with each other after a thick 3 {mu}m layer of GaAs growth on a Ge substrate as observed by scanning electron microscopy studies. Double crystal x-ray diffraction data shows a slight compression of GaAs on Ge, and the full width at half maximum decreases with increasing growth temperatures. This confirms that the APBs annihilate inside the GaAs epitaxial films. Low temperature photoluminescence measurements confirm the self-annihilation of the APBs at low temperature growth and the generation of APBs at higher growth temperatures. {copyright} 2001 American Institute of Physics.},
doi = {10.1063/1.1368870},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 11,
volume = 89,
place = {United States},
year = {2001},
month = {6}
}