Etching trenches to effectively create electron quantum wires for single-electron-transistor applications
By self-consistently solving two-dimensional Schrodinger and Poisson equations, we have studied electron quantum wires formed by etching two shallow trenches in GaAs/InGaAs/AlGaAs and GaAs/AlGaAs heterostructures for single-electron-transistor applications. Two-dimensional electron gases (2DEGs) form in the InGaAs layer in GaAs/InGaAs/AlGaAs and at the GaAs/AlGaAs interface in GaAs/AlGaAs heterostructure, the two etched trenches deplete the carriers of the 2DEGs underneath and thus effectively define an electron quantum wire. It has been determined that two etched trenches with a depth of 50 nm and a spatial separation of 250 nm are optimal to create an electron quantum wire in a GaAs/InGaAs/AlGaAs heterostructure with a cross section of 80{times}10 nm{sup 2} and a peak electron concentration of 1.5{times}10{sup 18} cm{sup {minus}3} at 4.2 K. {copyright} 2001 American Institute of Physics.
- Sponsoring Organization:
- (US)
- OSTI ID:
- 40203200
- Journal Information:
- Applied Physics Letters, Vol. 78, Issue 23; Other Information: DOI: 10.1063/1.1377315; Othernumber: APPLAB000078000023003705000001; 007123APL; PBD: 4 Jun 2001; ISSN 0003-6951
- Publisher:
- The American Physical Society
- Country of Publication:
- United States
- Language:
- English
Similar Records
Two-dimensional electron gases in strained quantum wells for AlN/GaN/AlN double heterostructure field-effect transistors on AlN
Enhanced peak-to-valley current ratio in InGaAs/InAlAs trench-type quantum-wire negative differential resistance field-effect transistors