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Title: Electromigration threshold in copper interconnects

Abstract

The electromigration threshold in copper interconnects is reported in this study. The length-dependent electromigration degradation rate is observed and quantified in the temperature range of 295{endash}400{degree}C. Based on the Blech electromigration model [I. A. Blech, J. Appl. Phys. >47, 1203 (1976)], a simplified equation is proposed to analyze the experimental data from various combinations of current density and interconnect length, as well as to estimate the electromigration threshold product of current density and line length, (jL){sub th}, at a certain temperature. The resulting (jL){sub th} value appears to be temperature dependent, decreasing with increasing temperature in the tested range between 295 and 400{degree}C. {copyright} 2001 American Institute of Physics.

Authors:
;
Publication Date:
Sponsoring Org.:
(US)
OSTI Identifier:
40203164
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 78; Journal Issue: 23; Other Information: DOI: 10.1063/1.1371251; Othernumber: APPLAB000078000023003598000001; 044119APL; PBD: 4 Jun 2001; Journal ID: ISSN 0003-6951
Publisher:
The American Physical Society
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; COPPER; CURRENT DENSITY; ELECTROPHORESIS; PHYSICS

Citation Formats

Wang, P -C, and Filippi, R G. Electromigration threshold in copper interconnects. United States: N. p., 2001. Web. doi:10.1063/1.1371251.
Wang, P -C, & Filippi, R G. Electromigration threshold in copper interconnects. United States. doi:10.1063/1.1371251.
Wang, P -C, and Filippi, R G. Mon . "Electromigration threshold in copper interconnects". United States. doi:10.1063/1.1371251.
@article{osti_40203164,
title = {Electromigration threshold in copper interconnects},
author = {Wang, P -C and Filippi, R G},
abstractNote = {The electromigration threshold in copper interconnects is reported in this study. The length-dependent electromigration degradation rate is observed and quantified in the temperature range of 295{endash}400{degree}C. Based on the Blech electromigration model [I. A. Blech, J. Appl. Phys. >47, 1203 (1976)], a simplified equation is proposed to analyze the experimental data from various combinations of current density and interconnect length, as well as to estimate the electromigration threshold product of current density and line length, (jL){sub th}, at a certain temperature. The resulting (jL){sub th} value appears to be temperature dependent, decreasing with increasing temperature in the tested range between 295 and 400{degree}C. {copyright} 2001 American Institute of Physics.},
doi = {10.1063/1.1371251},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 23,
volume = 78,
place = {United States},
year = {2001},
month = {6}
}