Electron cyclotron resonance in strained Si and Si{sub 0.94}Ge{sub 0.06} channels on relaxed Si{sub 0.62}Ge{sub 0.38} buffers grown by rapid thermal chemical vapor deposition
- National Chunghsing Univ., Taichung (Taiwan, Province of China). Dept. of Electrical Engineering
- Indian Inst. of Science, Bangalore (India). Dept. of Physics
The authors report the far-infrared measurements of the electron cyclotron resonance absorption in n-type Si/Si{sub 0.62}Ge{sub 0.38} and Si{sub 0.94}Ge{sub 0.06}/Si{sub 0.62}Ge{sub 0.38} modulation-doped heterostructures grown by rapid thermal chemical vapor deposition. The strained Si and Si{sub 0.94}Ge{sub 0.06} channels were grown on relaxed Si{sub 0.62}Ge{sub 0.38} buffer layers, which consist of 0.6 {micro}m uniform Si{sub 0.62}Ge{sub 0.38} layers and 0.5 {micro}m compositionally graded relaxed SiGe layers from 0% Ge to 38% Ge. The buffer layers were annealed at 800 C for 1 hr to obtain complete relaxation. The sampled had 100 {angstrom} spacers and 300 {angstrom} 2 {times} 10{sup 19} cm{sup {minus}3} n-type supply layers on the tops of the 75 {angstrom} channels. The far-infrared measurements of electron cyclotron resonance were performed at 4K with the magnetic field of 4--8 Tesla. The effective masses determined from the slope of center frequency of absorption peak vs applied magnetic field plot are 0.20 m{sub o} and 0.19 m{sub o} for the two dimensional electron gases in the Si and Si{sub 0.94}Ge{sub 0.06} channels, respectively. The Si effective mass is very close to that of two dimensional electron gas in Si MOSFET (0.198m{sub o}). The electron effective mass of Si{sub 0.94}Ge{sub 0.06} is reported for the first time and about 5% lower than that of pure Si.
- OSTI ID:
- 400684
- Report Number(s):
- CONF-960401-; ISBN 1-55899-332-0; TRN: IM9650%%89
- Resource Relation:
- Conference: Spring meeting of the Materials Research Society (MRS), San Francisco, CA (United States), 8-12 Apr 1996; Other Information: PBD: 1996; Related Information: Is Part Of Rapid thermal and integrated processing 5; Gelpey, J.C. [ed.] [AST Elektronik USA, Inc., Lynnfield, MA (United States)]; Oeztuerk, M.C. [ed.] [North Carolina State Univ., Raleigh, NC (United States)]; Thakur, R.P.S. [ed.] [Micron Technology, Inc., Boise, ID (United States)]; Fiory, A.T. [ed.] [Bell Labs., Murray Hill, NJ (United States). Lucent Technology]; Roozeboom, F. [ed.] [Philips Research, Eindhoven (Netherlands)]; PB: 400 p.; Materials Research Society symposium proceedings, Volume 429
- Country of Publication:
- United States
- Language:
- English
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