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Title: Measurement of lateral dopant diffusion in rapid thermal annealed W-polycide gate structures

Abstract

Lateral dopant diffusion is a well known problem in dual-gate W-polycide CMOS devices. The authors have recently demonstrated that RTA processing helps to alleviate this problem and at the same time ensures sufficient dopant activation. However, due to the complex micro-structural changes in both poly-Si and WSi{sub x} (x {approximately} 2.5) layers during the RTA process, the time dependence of the diffusion processes and dopant distribution are difficult to predict. Consequently, the process optimization and device simulations are rather unreliable. They describe a new experimental technique to measure lateral dopant diffusion and 2-dimensional dopant distribution in RTA processed W-polycide structures using conventional SIMS analysis of lithographically defined test structures. The experiments show that the technique is capable of measuring lateral dopant diffusion over distances between one and tens of microns without losing the vertical resolution of conventional SIMS profiling. The technique can be used to study diffusion processes in a variety of materials and multi-layer structures.

Authors:
; ; ; ; ; ;  [1];  [2]
  1. Bell Labs., Murray Hill, NJ (United States). Lucent Technologies
  2. Bell Labs., Breinigsville, PA (United States). Lucent Technologies
Publication Date:
OSTI Identifier:
400664
Report Number(s):
CONF-960401-
ISBN 1-55899-332-0; TRN: IM9650%%69
Resource Type:
Book
Resource Relation:
Conference: Spring meeting of the Materials Research Society (MRS), San Francisco, CA (United States), 8-12 Apr 1996; Other Information: PBD: 1996; Related Information: Is Part Of Rapid thermal and integrated processing 5; Gelpey, J.C. [ed.] [AST Elektronik USA, Inc., Lynnfield, MA (United States)]; Oeztuerk, M.C. [ed.] [North Carolina State Univ., Raleigh, NC (United States)]; Thakur, R.P.S. [ed.] [Micron Technology, Inc., Boise, ID (United States)]; Fiory, A.T. [ed.] [Bell Labs., Murray Hill, NJ (United States). Lucent Technology]; Roozeboom, F. [ed.] [Philips Research, Eindhoven (Netherlands)]; PB: 400 p.; Materials Research Society symposium proceedings, Volume 429
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES; SEMICONDUCTOR MATERIALS; ANNEALING; MICROSTRUCTURE; SILICON; SILICON OXIDES; TUNGSTEN SILICIDES; SEMICONDUCTOR DEVICES; MANUFACTURING; PHOSPHORUS ADDITIONS; BORON ADDITIONS; ARSENIC ADDITIONS; NITROGEN ADDITIONS; DOPED MATERIALS; CHEMICAL VAPOR DEPOSITION; SPUTTERING; DIFFUSION; ION IMPLANTATION; ION MICROPROBE ANALYSIS; MASS SPECTROSCOPY; EXPERIMENTAL DATA

Citation Formats

Schiml, T, Bevk, J, Furtsch, M, Georgiou, G E, Cirelli, R, Mansfield, W M, Silverman, P J, and Luftman, H S. Measurement of lateral dopant diffusion in rapid thermal annealed W-polycide gate structures. United States: N. p., 1996. Web.
Schiml, T, Bevk, J, Furtsch, M, Georgiou, G E, Cirelli, R, Mansfield, W M, Silverman, P J, & Luftman, H S. Measurement of lateral dopant diffusion in rapid thermal annealed W-polycide gate structures. United States.
Schiml, T, Bevk, J, Furtsch, M, Georgiou, G E, Cirelli, R, Mansfield, W M, Silverman, P J, and Luftman, H S. Sun . "Measurement of lateral dopant diffusion in rapid thermal annealed W-polycide gate structures". United States.
@article{osti_400664,
title = {Measurement of lateral dopant diffusion in rapid thermal annealed W-polycide gate structures},
author = {Schiml, T and Bevk, J and Furtsch, M and Georgiou, G E and Cirelli, R and Mansfield, W M and Silverman, P J and Luftman, H S},
abstractNote = {Lateral dopant diffusion is a well known problem in dual-gate W-polycide CMOS devices. The authors have recently demonstrated that RTA processing helps to alleviate this problem and at the same time ensures sufficient dopant activation. However, due to the complex micro-structural changes in both poly-Si and WSi{sub x} (x {approximately} 2.5) layers during the RTA process, the time dependence of the diffusion processes and dopant distribution are difficult to predict. Consequently, the process optimization and device simulations are rather unreliable. They describe a new experimental technique to measure lateral dopant diffusion and 2-dimensional dopant distribution in RTA processed W-polycide structures using conventional SIMS analysis of lithographically defined test structures. The experiments show that the technique is capable of measuring lateral dopant diffusion over distances between one and tens of microns without losing the vertical resolution of conventional SIMS profiling. The technique can be used to study diffusion processes in a variety of materials and multi-layer structures.},
doi = {},
url = {https://www.osti.gov/biblio/400664}, journal = {},
number = ,
volume = ,
place = {United States},
year = {1996},
month = {12}
}

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