RTA processing of W-polycide dual-gate sub-micron structures for low-voltage CMOS technology

Book · Sun Dec 01 00:00:00 EST 1996

OSTI ID:400663

Bevk, J; Furtsch, M; Georgiou, G E; Hillenius, S J; Schielein, D; Schiml, T; Silverman, P J ^[1]; Luftman, H S ^[2]

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1. Bell Labs., Murray Hill, NJ (United States). Lucent Technologies
2. Bell Labs., Breinigsville, PA (United States). Lucent Technologies

Deep submicron CMOS technology for low-power, low-voltage applications requires the use of symmetric n{sup +}/p{sup +} poly gate structures. This requirement introduces a number of processing challenges, involving fundamental issues of atomic diffusion over distances of 1{angstrom} to {approximately} 30 {micro}m. Two of the critical issues are dopant cross-diffusion between P- and NMOS devices with connected gates, resulting in large threshold voltage shifts, and boron penetration through the gate oxide. The authors show that in devices with W-polycide dual-gate structure most of these problems can be alleviated by using rapid thermal annealing, RTA, in combination with a few additional, simple processing steps (e.g., low-temperature recrystallization of a-Si layer and selective nitrogen co-implants). The RTA step, in particular, ensures that the boron activation in the p{sup +} poly-Si remains high and negates any effects of arsenic cross-diffusion. CMOS devices with properly processed gates have low gate stack profiles, small threshold voltage shifts (< 30 mV), and excellent device characteristics.

• OSTI ID: 400663
• Report Number(s): CONF-960401-; ISBN 1-55899-332-0; TRN: IM9650%%68
• Resource Relation: Conference: Spring meeting of the Materials Research Society (MRS), San Francisco, CA (United States), 8-12 Apr 1996; Other Information: PBD: 1996; Related Information: Is Part Of Rapid thermal and integrated processing 5; Gelpey, J.C. [ed.] [AST Elektronik USA, Inc., Lynnfield, MA (United States)]; Oeztuerk, M.C. [ed.] [North Carolina State Univ., Raleigh, NC (United States)]; Thakur, R.P.S. [ed.] [Micron Technology, Inc., Boise, ID (United States)]; Fiory, A.T. [ed.] [Bell Labs., Murray Hill, NJ (United States). Lucent Technology]; Roozeboom, F. [ed.] [Philips Research, Eindhoven (Netherlands)]; PB: 400 p.; Materials Research Society symposium proceedings, Volume 429
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES
SEMICONDUCTOR MATERIALS
ANNEALING
SILICON
TUNGSTEN SILICIDES
SEMICONDUCTOR DEVICES
MANUFACTURING
ARSENIC ADDITIONS
NITROGEN ADDITIONS
BORON ADDITIONS
DOPED MATERIALS
ION IMPLANTATION
DIFFUSION
CARRIER DENSITY
ELECTRIC POTENTIAL
ION MICROPROBE ANALYSIS
MASS SPECTROSCOPY
EXPERIMENTAL DATA