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Title: Measuring Ge segregation by real-time stress monitoring during Si{sub 1{minus}{ital x}}Ge{sub {ital x}} molecular beam epitaxy

Abstract

Real-time stress measurements during Si{sub 1{minus}{ital x}}Ge{sub {ital x}}/Si molecular beam epitaxy are used to dynamically monitor Ge surface segregation. Segregation during alloy growth produces a change in the surface stress that offsets the coherency stress in the pseudomorphic film. We outline a method for analyzing the stress evolution kinetics to determine the alloy composition profile resulting from segregation. {copyright} {ital 1996 American Institute of Physics.}

Authors:
;  [1]
  1. Sandia National Laboratories, Albuquerque, New Mexico 87185-1415 (United States)
Publication Date:
Research Org.:
Sandia National Laboratory
OSTI Identifier:
399757
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 69; Journal Issue: 25; Other Information: PBD: Dec 1996
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; GERMANIUM SILICIDES; MOLECULAR BEAM EPITAXY; SILICON; STRESSES; CHEMICAL COMPOSITION; SEGREGATION

Citation Formats

Floro, J A, and Chason, E. Measuring Ge segregation by real-time stress monitoring during Si{sub 1{minus}{ital x}}Ge{sub {ital x}} molecular beam epitaxy. United States: N. p., 1996. Web. doi:10.1063/1.117119.
Floro, J A, & Chason, E. Measuring Ge segregation by real-time stress monitoring during Si{sub 1{minus}{ital x}}Ge{sub {ital x}} molecular beam epitaxy. United States. https://doi.org/10.1063/1.117119
Floro, J A, and Chason, E. Sun . "Measuring Ge segregation by real-time stress monitoring during Si{sub 1{minus}{ital x}}Ge{sub {ital x}} molecular beam epitaxy". United States. https://doi.org/10.1063/1.117119.
@article{osti_399757,
title = {Measuring Ge segregation by real-time stress monitoring during Si{sub 1{minus}{ital x}}Ge{sub {ital x}} molecular beam epitaxy},
author = {Floro, J A and Chason, E},
abstractNote = {Real-time stress measurements during Si{sub 1{minus}{ital x}}Ge{sub {ital x}}/Si molecular beam epitaxy are used to dynamically monitor Ge surface segregation. Segregation during alloy growth produces a change in the surface stress that offsets the coherency stress in the pseudomorphic film. We outline a method for analyzing the stress evolution kinetics to determine the alloy composition profile resulting from segregation. {copyright} {ital 1996 American Institute of Physics.}},
doi = {10.1063/1.117119},
url = {https://www.osti.gov/biblio/399757}, journal = {Applied Physics Letters},
number = 25,
volume = 69,
place = {United States},
year = {1996},
month = {12}
}