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Title: High-efficiency one-sun photovoltaic module demonstration using solar-grade CZ silicon. Final report

Abstract

This work was performed jointly by Sandia National Laboratories (Albuquerque, NM) and Siemens Solar Industries (Camarillo, CA) under a Cooperative Research and Development Agreement (CRADA 1248). The work covers the period May 1994 to March 1996. The purpose of the work was to explore the performance potential of commercial, photovoltaic-grade Czochralski (Cz) silicon, and to demonstrate this potential through fabrication of high-efficiency cells and a module. Fabrication of the module was omitted in order to pursue further development of advanced device structures. The work included investigation of response of the material to various fabrication processes, development of advanced cell structures using the commercial material, and investigation of the stability of Cz silicon solar cells. Some important achievements of this work include the following: post-diffusion oxidations were found to be a possible source of material contamination; bulk lifetimes around 75 pts were achieved; efficiencies of 17.6% and 15.7% were achieved for large-area cells using advanced cell structures (back-surface fields and emitter wrap-through); and preliminary investigations into photodegradation in Cz silicon solar cells found that oxygen thermal donors might be involved. Efficiencies around 20% should be possible with commercial, photovoltaic-grade silicon using properly optimized processes and device structures.

Authors:
Publication Date:
Research Org.:
Sandia National Labs., Albuquerque, NM (United States)
Sponsoring Org.:
USDOE, Washington, DC (United States)
OSTI Identifier:
399682
Report Number(s):
SAND-96-2402
ON: DE97000585; TRN: 96:006371
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Technical Report
Resource Relation:
Other Information: PBD: Oct 1996
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; PHOTOVOLTAIC CELLS; DESIGN; SILICON SOLAR CELLS; EFFICIENCY; EXPERIMENTAL DATA

Citation Formats

Gee, J.M.. High-efficiency one-sun photovoltaic module demonstration using solar-grade CZ silicon. Final report. United States: N. p., 1996. Web. doi:10.2172/399682.
Gee, J.M.. High-efficiency one-sun photovoltaic module demonstration using solar-grade CZ silicon. Final report. United States. doi:10.2172/399682.
Gee, J.M.. Tue . "High-efficiency one-sun photovoltaic module demonstration using solar-grade CZ silicon. Final report". United States. doi:10.2172/399682. https://www.osti.gov/servlets/purl/399682.
@article{osti_399682,
title = {High-efficiency one-sun photovoltaic module demonstration using solar-grade CZ silicon. Final report},
author = {Gee, J.M.},
abstractNote = {This work was performed jointly by Sandia National Laboratories (Albuquerque, NM) and Siemens Solar Industries (Camarillo, CA) under a Cooperative Research and Development Agreement (CRADA 1248). The work covers the period May 1994 to March 1996. The purpose of the work was to explore the performance potential of commercial, photovoltaic-grade Czochralski (Cz) silicon, and to demonstrate this potential through fabrication of high-efficiency cells and a module. Fabrication of the module was omitted in order to pursue further development of advanced device structures. The work included investigation of response of the material to various fabrication processes, development of advanced cell structures using the commercial material, and investigation of the stability of Cz silicon solar cells. Some important achievements of this work include the following: post-diffusion oxidations were found to be a possible source of material contamination; bulk lifetimes around 75 pts were achieved; efficiencies of 17.6% and 15.7% were achieved for large-area cells using advanced cell structures (back-surface fields and emitter wrap-through); and preliminary investigations into photodegradation in Cz silicon solar cells found that oxygen thermal donors might be involved. Efficiencies around 20% should be possible with commercial, photovoltaic-grade silicon using properly optimized processes and device structures.},
doi = {10.2172/399682},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Oct 01 00:00:00 EDT 1996},
month = {Tue Oct 01 00:00:00 EDT 1996}
}

Technical Report:

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