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Title: Visible wavelength (6470 A) Ga{sub {ital x}}In{sub 1{minus}{ital x}}P/GaAs{sub 0.66}P{sub 0.34} quantum wire heterostructures

Abstract

Utilizing the strain-induced lateral-layer ordering (SILO) process, we have grown Ga{sub {ital x}}In{sub 1{minus}{ital x}}P multiple quantum wires (MQWR) on ternary GaAs{sub 0.66}P{sub 0.34} substrates using a modified strain-balance mechanism. The resulting [110] lateral modulation occurred with a periodicity of {approximately}300 A. Two dimensions of quantum confinement were obtained by surrounding the laterally confined Ga{sub {ital x}}In{sub 1{minus}{ital x}}P regions by layers of higher-energy-gap Al{sub 0.15}Ga{sub 0.53}In{sub 0.32}P in the growth direction. A redshift in the photoluminescence emission was observed as the growth temperature was increased attributed to a stronger lateral composition modulation at the higher growth temperatures. Based on the modified strain-balance mechanism, light-emitting diodes with the Ga{sub {ital x}}In{sub 1{minus}{ital x}}P MQWR active region were fabricated using the SILO process. Strongly TE-polarized room-temperature electroluminescence from these devices was observed at 6470 A. {copyright} {ital 1996 American Institute of Physics.}

Authors:
; ; ; ;  [1];  [2]
  1. Department of Electrical and Computer Engineering and Microelectronics Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States)
  2. Optoelectronics Division, Hewlett-Packard, San Jose, California 95131 (United States)
Publication Date:
Research Org.:
Univ. of Illinois at Urbana-Champaign, IL (United States)
OSTI Identifier:
397440
DOE Contract Number:  
FG02-91ER45439
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 80; Journal Issue: 12; Other Information: PBD: Dec 1996
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; GALLIUM ARSENIDES; HETEROJUNCTIONS; GALLIUM PHOSPHIDES; INDIUM PHOSPHIDES; LIGHT EMITTING DIODES; VISIBLE RADIATION; PHOTOLUMINESCENCE; ELECTROLUMINESCENCE; STRAINS; HETEROSTRUCTURES; QUANTUM WIRES

Citation Formats

Moy, A M, Chen, A C, Cheng, K Y, Chou, L J, Hsieh, K C, and Tu, C. Visible wavelength (6470 A) Ga{sub {ital x}}In{sub 1{minus}{ital x}}P/GaAs{sub 0.66}P{sub 0.34} quantum wire heterostructures. United States: N. p., 1996. Web. doi:10.1063/1.363725.
Moy, A M, Chen, A C, Cheng, K Y, Chou, L J, Hsieh, K C, & Tu, C. Visible wavelength (6470 A) Ga{sub {ital x}}In{sub 1{minus}{ital x}}P/GaAs{sub 0.66}P{sub 0.34} quantum wire heterostructures. United States. doi:10.1063/1.363725.
Moy, A M, Chen, A C, Cheng, K Y, Chou, L J, Hsieh, K C, and Tu, C. Sun . "Visible wavelength (6470 A) Ga{sub {ital x}}In{sub 1{minus}{ital x}}P/GaAs{sub 0.66}P{sub 0.34} quantum wire heterostructures". United States. doi:10.1063/1.363725.
@article{osti_397440,
title = {Visible wavelength (6470 A) Ga{sub {ital x}}In{sub 1{minus}{ital x}}P/GaAs{sub 0.66}P{sub 0.34} quantum wire heterostructures},
author = {Moy, A M and Chen, A C and Cheng, K Y and Chou, L J and Hsieh, K C and Tu, C},
abstractNote = {Utilizing the strain-induced lateral-layer ordering (SILO) process, we have grown Ga{sub {ital x}}In{sub 1{minus}{ital x}}P multiple quantum wires (MQWR) on ternary GaAs{sub 0.66}P{sub 0.34} substrates using a modified strain-balance mechanism. The resulting [110] lateral modulation occurred with a periodicity of {approximately}300 A. Two dimensions of quantum confinement were obtained by surrounding the laterally confined Ga{sub {ital x}}In{sub 1{minus}{ital x}}P regions by layers of higher-energy-gap Al{sub 0.15}Ga{sub 0.53}In{sub 0.32}P in the growth direction. A redshift in the photoluminescence emission was observed as the growth temperature was increased attributed to a stronger lateral composition modulation at the higher growth temperatures. Based on the modified strain-balance mechanism, light-emitting diodes with the Ga{sub {ital x}}In{sub 1{minus}{ital x}}P MQWR active region were fabricated using the SILO process. Strongly TE-polarized room-temperature electroluminescence from these devices was observed at 6470 A. {copyright} {ital 1996 American Institute of Physics.}},
doi = {10.1063/1.363725},
journal = {Journal of Applied Physics},
number = 12,
volume = 80,
place = {United States},
year = {1996},
month = {12}
}