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Title: Structure and magnetic properties of SmMn{sub 2}(Ge{sub 1{minus}{ital x}}Si{sub {ital x}}){sub 2}

Abstract

The structure and magnetic properties of SmMn{sub 2}(Ge{sub 1{minus}{ital x}}Si{sub {ital x}}){sub 2} compounds ({ital x}=0{endash}1.0) have been investigated. All the compounds crystallize in ThCr{sub 2}Si{sub 2}-type structure. Substitution of Si for Ge leads to a linear decrease of the lattice constants and the unit-cell volume. In all compounds a transition from the ferromagnetic to the antiferromagnetic state is observed at a lower temperature {ital T}{sub 1}, which first decreases, goes through a minimum at {ital x}=0.4{endash}0.6, and then increases again with Si concentration. As temperature increases, for the compounds with {ital x}{lt}0.3 both a antiferromagnetic{endash}ferromagnetic transition and the ferromagnetic{endash}paramagnetic transitions are observed as well at {ital T}{sub 2} and at the Curie temperature {ital T}{sub {ital c}}, respectively. With increasing Si content the {ital T}{sub {ital c}} decreases, whereas {ital T}{sub 2} increases from 140 K for {ital x}=0 to 215 K for {ital x}=0.2. For compounds with {ital x}{ge}0.3 the antiferromagnetic{endash}paramagnetic transition was observed with increasing temperature and the N{acute e}el temperature increases with increasing Si content. The saturation magnetization at 1.5 K decreases first, goes through a minimum at {ital x}=0.6, and then increases again with increasing Si content. At room temperature, the saturation magnetization decreases monotonicallymore » from 3.27 {mu}{sub {ital B}}/f.u. for {ital x}=0 to nearly zero for {ital x}=0.3. {copyright} {ital 1996 American Institute of Physics.}« less

Authors:
; ; ; ;  [1]; ;  [2];  [3]
  1. State Key Laboratory of Magnetism, Institute of Physics, Chinese Academy of Sciences, P.O. Box 603, Beijing 100080, People`s Republic of (China)
  2. Department of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, People`s Republic of (China)
  3. Van der Waals-Zeeman Institute, University of Amsterdam, Valckenierstraat 65, 1018 XE, Amsterdam (The Netherlands)
Publication Date:
OSTI Identifier:
397427
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 80; Journal Issue: 12; Other Information: PBD: Dec 1996
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; SAMARIUM SILICIDES; CRYSTAL STRUCTURE; MANGANESE SILICIDES; GERMANIUM COMPOUNDS; MAGNETIZATION; PHASE TRANSFORMATIONS; TEMPERATURE DEPENDENCE; CURIE POINT

Citation Formats

Wang, Y, Yang, F, Tang, N, Hu, J, Zhou, K, Chen, C, Wang, Q, and de Boer, F R. Structure and magnetic properties of SmMn{sub 2}(Ge{sub 1{minus}{ital x}}Si{sub {ital x}}){sub 2}. United States: N. p., 1996. Web. doi:10.1063/1.363760.
Wang, Y, Yang, F, Tang, N, Hu, J, Zhou, K, Chen, C, Wang, Q, & de Boer, F R. Structure and magnetic properties of SmMn{sub 2}(Ge{sub 1{minus}{ital x}}Si{sub {ital x}}){sub 2}. United States. https://doi.org/10.1063/1.363760
Wang, Y, Yang, F, Tang, N, Hu, J, Zhou, K, Chen, C, Wang, Q, and de Boer, F R. 1996. "Structure and magnetic properties of SmMn{sub 2}(Ge{sub 1{minus}{ital x}}Si{sub {ital x}}){sub 2}". United States. https://doi.org/10.1063/1.363760.
@article{osti_397427,
title = {Structure and magnetic properties of SmMn{sub 2}(Ge{sub 1{minus}{ital x}}Si{sub {ital x}}){sub 2}},
author = {Wang, Y and Yang, F and Tang, N and Hu, J and Zhou, K and Chen, C and Wang, Q and de Boer, F R},
abstractNote = {The structure and magnetic properties of SmMn{sub 2}(Ge{sub 1{minus}{ital x}}Si{sub {ital x}}){sub 2} compounds ({ital x}=0{endash}1.0) have been investigated. All the compounds crystallize in ThCr{sub 2}Si{sub 2}-type structure. Substitution of Si for Ge leads to a linear decrease of the lattice constants and the unit-cell volume. In all compounds a transition from the ferromagnetic to the antiferromagnetic state is observed at a lower temperature {ital T}{sub 1}, which first decreases, goes through a minimum at {ital x}=0.4{endash}0.6, and then increases again with Si concentration. As temperature increases, for the compounds with {ital x}{lt}0.3 both a antiferromagnetic{endash}ferromagnetic transition and the ferromagnetic{endash}paramagnetic transitions are observed as well at {ital T}{sub 2} and at the Curie temperature {ital T}{sub {ital c}}, respectively. With increasing Si content the {ital T}{sub {ital c}} decreases, whereas {ital T}{sub 2} increases from 140 K for {ital x}=0 to 215 K for {ital x}=0.2. For compounds with {ital x}{ge}0.3 the antiferromagnetic{endash}paramagnetic transition was observed with increasing temperature and the N{acute e}el temperature increases with increasing Si content. The saturation magnetization at 1.5 K decreases first, goes through a minimum at {ital x}=0.6, and then increases again with increasing Si content. At room temperature, the saturation magnetization decreases monotonically from 3.27 {mu}{sub {ital B}}/f.u. for {ital x}=0 to nearly zero for {ital x}=0.3. {copyright} {ital 1996 American Institute of Physics.}},
doi = {10.1063/1.363760},
url = {https://www.osti.gov/biblio/397427}, journal = {Journal of Applied Physics},
number = 12,
volume = 80,
place = {United States},
year = {Sun Dec 01 00:00:00 EST 1996},
month = {Sun Dec 01 00:00:00 EST 1996}
}