Heteroepitaxial structures of SrTiO{sub 3}/TiN on Si(100) by {ital in} {ital situ} pulsed laser deposition
- Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7916 (United States)
- Department of Physics and Astronomy, University of North Carolina, Chapel Hill, North Carolina 27599 (United States)
- Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States)
High-quality ceramics based heteroepitaxial structures of oxide-nitride-semiconductors, i.e., SrTiO{sub 3}/TiN/Si(100) have been fabricated by {ital in} {ital situ} pulsed laser deposition. The dependence of substrate temperature and oxygen partial pressure on the crystalline quality of the SrTiO{sub 3} films on Si with epitaxial TiN template has been examined. We found that epitaxial growth occurs on TiN/Si(100) above 500{degree}C, initially at a reduced O{sub 2} pressure (10{sup {minus}6} Torr), and followed by a deposition in the range of 5{endash}10{times}10{sup {minus}4} Torr. X-ray diffraction ({Theta}, {omega}, and {Phi} scans) and transmission electron microscope (TEM) results revealed an excellent alignment of SrTiO{sub 3} and TiN films on Si(100) with a cube-on-cube epitaxy. Rutherford backscattering and ion channeling results show a channeling minimum yield ({chi}{sub min}) of {approximately}13{percent} for the SrTiO{sub 3} films. High-resolution TEM results on the SrTiO{sub 3}/TiN interface show that the epitaxial SrTiO{sub 3} film is separated from the TiN by an uniform 80{endash}90 A crystalline interposing layer presumably of TiN{sub {ital x}}O{sub 1{minus}{ital x}} (oxy-nitride). The SrTiO{sub 3} film fabricated at 700{degree}C showed a high relative dielectric constant of 312 at the frequency of 1 MHz. The electrical resistivity and the breakdown field of the SrTiO{sub 3} films were more than 5{times}10{sup 12} {Omega}cm and 6{times}10{sup 5} Vcm{sup {minus}1}, respectively. An estimated leakage current density measured at an electric field of 5{times}10{sup 5} V/cm{sup {minus}1} was less than 10{sup {minus}7} A/cm{sup 2}. {copyright} {ital 1996 American Institute of Physics.}
- OSTI ID:
- 397419
- Journal Information:
- Journal of Applied Physics, Vol. 80, Issue 12; Other Information: PBD: Dec 1996
- Country of Publication:
- United States
- Language:
- English
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