Morphology and microstructure of epitaxial Cu(001) films grown by primary ion deposition on Si and Ge substrates
- Department of Materials Science, the Materials Research Laboratory, and the Coordinated Science Laboratory, University of Illinois, Urbana, Illinois 61801 (United States)
- Department of Physics, Linkoeping University, S-581 83 Linkoeping (Sweden)
A low-energy, high-brightness, broad beam Cu ion source is used to study the effects of self-ion energy {ital E}{sub {ital i}} on the deposition of epitaxial Cu films in ultrahigh vacuum. Atomically flat Ge(001) and Si(001) substrates are verified by {ital in} {ital situ} scanning tunneling microscopy (STM) prior to deposition of 300 nm Cu films with {ital E}{sub {ital i}} ranging from 20 to 100 eV. Film microstructure, texture, and morphology are characterized using x-ray diffraction {omega}-rocking curves, pole figure analyses, and STM. Primary ion deposition produces significant improvements in both the surface morphology and mosaic spread of the films: At {ital E}{sub {ital i}}{gt}37 eV the surface roughness decreases by nearly a factor of 2 relative to evaporated Cu films, and at {ital E}{sub {ital i}}{approx_equal}35 eV the mosaic spread of Cu films grown on Si substrates is only {approx_equal}2{degree}, nearly a factor of 2 smaller than that of evaporated Cu. During deposition with {ital E}{sub {ital i}}{approx_equal}25 eV on Ge substrates, the film coherently relaxes the 10{percent} misfit strain by formation of a tilt boundary which is fourfold symmetric toward {l_angle}111{r_angle}. The films have essentially bulk resistivity with {rho}=1.9{plus_minus}0.1 {mu}{Omega}cm at room temperature but the residual resistance at 10 K, {rho}{sub 0}, shows a broad maximum as a function of {ital E}{sub {ital i}}, e.g., at {ital E}{sub {ital i}}{approx_equal}30 eV, {rho}{sub 0}=0.5 {mu}{Omega}cm. {copyright} {ital 1996 American Institute of Physics.}
- Research Organization:
- Univ. of Illinois at Urbana-Champaign, IL (United States)
- DOE Contract Number:
- FG02-91ER45439
- OSTI ID:
- 397418
- Journal Information:
- Journal of Applied Physics, Vol. 80, Issue 12; Other Information: PBD: Dec 1996
- Country of Publication:
- United States
- Language:
- English
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