Luminescence efficiency of cerium doped insulators: The role of electron transfer processes

Journal Article · Fri Nov 01 00:00:00 EST 1996 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.117286· OSTI ID:397391

Raukas, M; Basun, S A; Schaik, W v; Yen, W M; Happek, U ^[1]

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1. Department of Physics and Astronomy, University of Georgia, Athens, Georgia 30602 (United States)

Insulating host materials doped with trivalent cerium show quantum efficiencies of the Ce{sup 3+} emission ranging from zero to unity. Comparing optical and photoelectrical properties of a very efficient scintillator material (Lu{sub 2}(SiO{sub 4})O:Ce) to those of cerium doped oxides with quenched emission, the radical differences for these materials are demonstrated to originate from the location of the cerium energy levels with respect to the host conduction band. Photoionization and subsequent nonradiative relaxation processes responsible for the luminescence quenching are discussed in a donor{endash}acceptor model for the impurity ion and a rule for luminescence efficiency is derived, applicable to a variety of phosphor and scintillator materials. {copyright} {ital 1996 American Institute of Physics.}

• OSTI ID: 397391
• Journal Information: Applied Physics Letters, Vol. 69, Issue 22; Other Information: PBD: Nov 1996
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
LUTETIUM OXIDES
PHOTOLUMINESCENCE
SILICON OXIDES
SCINTILLATION COUNTERS
CERIUM ADDITIONS
ELECTRON TRANSFER
PHOSPHORS
PHOTOIONIZATION
IMPURITIES
QUANTUM EFFICIENCY