Pulsed laser deposition of Nd:YAG crystalline thin films

Journal Article · Wed May 01 00:00:00 EDT 1996 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.50415· OSTI ID:397367

Ezaki, M ^[1]; Kumagai, H ^[2]; Kobayashi, K ^[1]; Toyoda, K ^[2]; Obara, M ^[1]

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1. Department of Electrical Engineering Faculty of Science and Technology, Keio University, 3-14-1 Hiyoshi, Kohoku-ku, Yokohama, 223 (Japan)
2. The Institute of Physical and Chemical Research (RIKEN), 2-1 Hirosawa, Wako, Saitama, 351-01 (Japan)

Textured Nd doped yttrium aluminum garnet (Y{sub 3}Al{sub 5}O{sub 12},YAG) crystalline thin films have been grown on silicon substrates by pulsed laser deposition method. The films were characterized by means of Rutherford backscattering spectrometry (RBS), x-ray analysis, atomic force microscopy (AFM). The results indicate that the composition of these films are that of YAG doped with Nd (1.2, 2.4 at.{percent}). AFM image shows that the Nd:YAG crystallites were oriented to the silicon surface at the substrate temperature of 700{degree}C. {copyright} {ital 1996 American Institute of Physics.}

• OSTI ID: 397367
• Report Number(s): CONF-950476-; ISSN 0094-243X; TRN: 96:029434
• Journal Information: AIP Conference Proceedings, Vol. 369, Issue 1; Conference: 12. international conference on laser interaction and related plasma phenomena, Osaka (Japan), 24-28 Apr 1995; Other Information: PBD: May 1996
• Country of Publication: United States
• Language: English

Related Subjects

70 PLASMA PHYSICS AND FUSION
LASER TARGETS
DEPOSITION
GARNETS
YTTRIUM OXIDES
ALUMINIUM OXIDES
THIN FILMS
NEODYMIUM ADDITIONS
CRYSTAL GROWTH
PULSES