Recent progress in AlGaN/GaN based optoelectronic devices

Book · Fri Nov 01 00:00:00 EST 1996

OSTI ID:395047

Khan, M A; Chen, Q; Sun, C J; Yang, J W ^[1]; Shur, M S ^[2]

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1. APA Optics, Inc., Blaine, MN (United States)
2. Univ. of Virginia, Charlottesville, VA (United States). Dept. of Electrical Engineering

The authors review the recent results on GaN based optoelectronic devices, which include InGaN-AlGaN Light Emitting Diodes (LEDs), GaN photoconductive, Schottky barrier, and p-n junction ultraviolet detectors, and optoelectronic AlGaN-GaN Heterostructure Field Effect Transistors. GaN-based optoelectronic devices cover a wide spectral range and demonstrate visible blind operation. A high quality of the epitaxial layers, the recent development of high performance GaN-based heterostructure field effect transistors, and transparent substrates make this material system uniquely suited for optoelectronic integrated circuits operating in visible and ultraviolet range.

• OSTI ID: 395047
• Report Number(s): CONF-951155-; ISBN 1-55899-298-7; TRN: IM9648%%124
• Resource Relation: Conference: Fall meeting of the Materials Research Society (MRS), Boston, MA (United States), 27 Nov - 1 Dec 1995; Other Information: PBD: 1996; Related Information: Is Part Of Gallium nitride and related materials; Ponce, F.A. [ed.] [Xerox Palo Alto Research Center, CA (United States)]; Dupuis, R.D. [ed.] [Univ. of Texas, Austin, TX (United States)]; Nakamura, S. [ed.] [Nichia Chemical Industries, Tokushima (Japan)]; Edmond, J.A. [ed.] [Cree Research, Inc., Durham, NC (United States)]; PB: 993 p.; Materials Research Society symposium proceedings, Volume 395
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES
COMPOSITE MATERIALS
CHEMICAL VAPOR DEPOSITION
GALLIUM NITRIDES
INDIUM NITRIDES
ALUMINIUM NITRIDES
ELECTRONIC EQUIPMENT
FABRICATION
PERFORMANCE
SUBSTRATES
SAPPHIRE
ORGANOMETALLIC COMPOUNDS
AMMONIA
DOPED MATERIALS
ELECTRICAL PROPERTIES
OPTICAL PROPERTIES
LIGHT EMITTING DIODES
TRANSISTORS
ULTRAVIOLET SPECTRA
EXPERIMENTAL DATA