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Title: New buffer layers for GaN on sapphire by atomic layer and molecular stream epitaxy

Abstract

The current approach of depositing a low temperature then annealed AlN or GaN buffer for the growth of GaN on sapphire results in a high dislocation density. These dislocations thread through the GaN layer to the surface. Reducing their density either by growing thicker films or using a strained layer superlattice is ineffective. Two new approaches for AlN/GaN buffer layer growth for GaN on sapphire have been employed: Atomic Layer Epitaxy (ALE) and molecular Stream Epitaxy (MSE). ALE is distinguished by organo-metallic/ammonia separation while MSE is distinguished by cyclic annealing of the growing film. Both ALE and MSE enhance two dimensional growth of single crystal GaN on sapphire. The structural quality of epitaxial GaN grown on these buffer layers was studied by transmission electron microscopy (TEM) and x-ray diffraction (XRD). The initial result for the ALE buffer shows an improved quality GaN film with lower defect densities. The MSE grown buffer layer closely resembles that of conventionally grown MOCVD buffer layers observed by others, with dislocations threading through the GaN epilayer. The effects of these buffer layers on the structural and optical properties of GaN grown on sapphire will be presented.

Authors:
; ; ; ; ; ;  [1]
  1. North Carolina State Univ., Raleigh, NC (United States)
Publication Date:
OSTI Identifier:
394968
Report Number(s):
CONF-951155-
ISBN 1-55899-298-7; TRN: IM9648%%45
Resource Type:
Book
Resource Relation:
Conference: Fall meeting of the Materials Research Society (MRS), Boston, MA (United States), 27 Nov - 1 Dec 1995; Other Information: PBD: 1996; Related Information: Is Part Of Gallium nitride and related materials; Ponce, F.A. [ed.] [Xerox Palo Alto Research Center, CA (United States)]; Dupuis, R.D. [ed.] [Univ. of Texas, Austin, TX (United States)]; Nakamura, S. [ed.] [Nichia Chemical Industries, Tokushima (Japan)]; Edmond, J.A. [ed.] [Cree Research, Inc., Durham, NC (United States)]; PB: 993 p.; Materials Research Society symposium proceedings, Volume 395
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; GALLIUM NITRIDES; CHEMICAL VAPOR DEPOSITION; MICROSTRUCTURE; LAYERS; INTERFACES; GAS FLOW; ORGANOMETALLIC COMPOUNDS; AMMONIA; ANNEALING; MONOCRYSTALS; TRANSMISSION ELECTRON MICROSCOPY; X-RAY DIFFRACTION; CRYSTAL DEFECTS; DISLOCATIONS; EXPERIMENTAL DATA

Citation Formats

Piner, E L, He, Y W, Boutros, K S, McIntosh, F G, Roberts, J C, Bedair, S M, and El-Masry, N A. New buffer layers for GaN on sapphire by atomic layer and molecular stream epitaxy. United States: N. p., 1996. Web.
Piner, E L, He, Y W, Boutros, K S, McIntosh, F G, Roberts, J C, Bedair, S M, & El-Masry, N A. New buffer layers for GaN on sapphire by atomic layer and molecular stream epitaxy. United States.
Piner, E L, He, Y W, Boutros, K S, McIntosh, F G, Roberts, J C, Bedair, S M, and El-Masry, N A. Fri . "New buffer layers for GaN on sapphire by atomic layer and molecular stream epitaxy". United States.
@article{osti_394968,
title = {New buffer layers for GaN on sapphire by atomic layer and molecular stream epitaxy},
author = {Piner, E L and He, Y W and Boutros, K S and McIntosh, F G and Roberts, J C and Bedair, S M and El-Masry, N A},
abstractNote = {The current approach of depositing a low temperature then annealed AlN or GaN buffer for the growth of GaN on sapphire results in a high dislocation density. These dislocations thread through the GaN layer to the surface. Reducing their density either by growing thicker films or using a strained layer superlattice is ineffective. Two new approaches for AlN/GaN buffer layer growth for GaN on sapphire have been employed: Atomic Layer Epitaxy (ALE) and molecular Stream Epitaxy (MSE). ALE is distinguished by organo-metallic/ammonia separation while MSE is distinguished by cyclic annealing of the growing film. Both ALE and MSE enhance two dimensional growth of single crystal GaN on sapphire. The structural quality of epitaxial GaN grown on these buffer layers was studied by transmission electron microscopy (TEM) and x-ray diffraction (XRD). The initial result for the ALE buffer shows an improved quality GaN film with lower defect densities. The MSE grown buffer layer closely resembles that of conventionally grown MOCVD buffer layers observed by others, with dislocations threading through the GaN epilayer. The effects of these buffer layers on the structural and optical properties of GaN grown on sapphire will be presented.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1996},
month = {11}
}

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