The structure and electric field dependent dielectric properties of annealed Sr{sub 1{minus}x}Ba{sub x}TiO{sub 3} ferroelectric thin films

Book · Fri Nov 01 00:00:00 EST 1996

OSTI ID:392164

Knauss, L A; Pond, J M; Horwitz, J S; Chrisey, D B ^[1]; Mueller, C H; Treece, R E ^[2]

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1. Naval Research Lab., Washington, DC (United States)
2. SCT, Golden, CO (United States)

The effect of a post deposition anneal on the structure and dielectric properties of epitaxial Sr{sub 1{minus}x}Ba{sub x}TiO{sub 3} (SBT) thin films with x = 0.35, 0.50 and 0.60 has been measured. The films were grown by pulsed laser deposition on LaAlO{sub 3} (001) substrates at 750 C in 350 mTorr of oxygen. The as-deposited films were single phase, (00{ell}) oriented with {omega}-scan widths for the (002) reflection between 0.16{degree} and 0.50{degree}. The dielectric properties of the as-deposited films exhibit a broad temperature dependence and a peak which is as much as 50 K below the peak in bulk SBT. Also, the lattice parameter, as measured by x-ray diffraction, of the as-deposited films was larger than the bulk indicating strain in the films. The as-deposited films were annealed for 8 hours at 900 C in oxygen. The dielectric properties of the annealed films were closer to that of bulk SBT and the lattice parameter was closer to the bulk lattice parameter indicating a reduction of strain. Annealing of as-deposited films also resulted in an increased dielectric tuning without increased dielectric loss.

• OSTI ID: 392164
• Report Number(s): CONF-951155-; ISBN 1-55899-304-5; TRN: IM9647%%18
• Resource Relation: Conference: Fall meeting of the Materials Research Society (MRS), Boston, MA (United States), 27 Nov - 1 Dec 1995; Other Information: PBD: 1996; Related Information: Is Part Of Epitaxial oxide thin films 2; Speck, J.S. [ed.] [Univ. of California, Santa Barbara, CA (United States)]; Fork, D.K. [ed.] [Xerox Palo Alto Research Center, CA (United States)]; Wolf, R.M. [ed.] [Philips Research Labs., Briarcliff Manor, NY (United States)]; Shiosaki, Tadashi [ed.] [Kyoto Univ. (Japan)]; PB: 577 p.; Materials Research Society symposium proceedings, Volume 401
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES
STRONTIUM OXIDES
ENERGY BEAM DEPOSITION
CRYSTAL STRUCTURE
DIELECTRIC PROPERTIES
BARIUM OXIDES
TITANIUM OXIDES
MICROWAVE EQUIPMENT
MATERIALS
LASERS
SUBSTRATES
LANTHANUM COMPOUNDS
ALUMINATES
ORIENTATION
X-RAY DIFFRACTION
LATTICE PARAMETERS
TEMPERATURE DEPENDENCE
ANNEALING
OXYGEN
CAPACITANCE
DISSIPATION FACTOR
EXPERIMENTAL DATA