Polarization characteristics of silicon photodiodes and their dependence on oxide thickness

Journal Article · Sun Sep 01 00:00:00 EDT 1996 · Review of Scientific Instruments

DOI:https://doi.org/10.1063/1.1147468· OSTI ID:389566

Saito, T; Hughey, L R; Proctor, J E; OBrian, T R ^[1]

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1. National Institute of Standards and Technology (NIST), B119 Radiation Physics, Gaithersburg, MD 20899 (United States)

We have studied the polarization dependence of silicon photodiode responsivity as a function of wavelength, the angle of incidence, and the thickness of the silicon dioxide overlayer. The experimental results in the spectral region where there is no absorption in the silicon dioxide are explained well by a purely optical model. The responsivity dependence on polarization in the VUV is found to be smaller than that predicted and to be explainable by the presence of charge injection from the silicon dioxide layer. {copyright} {ital 1996 American Institute of Physics.}

• OSTI ID: 389566
• Report Number(s): CONF-9510119-; ISSN 0034-6748; TRN: 96:027975
• Journal Information: Review of Scientific Instruments, Vol. 67, Issue 9; Conference: SRI `95: synchrotron radiation instrumentation symposium and the 7. users meeting for the advanced photon source (APS), Argonne, IL (United States), 16-20 Oct 1995; Other Information: PBD: Sep 1996
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
X-RAY EQUIPMENT
SI SEMICONDUCTOR DETECTORS
POLARIZATION
PHOTODIODES
SYNCHROTRON RADIATION
INCIDENCE ANGLE
RESPONSE FUNCTIONS
SILICON OXIDES
SURFACE COATING
THICKNESS