Theory of Raman spectra of heavily doped semiconductor multiple quantum wells
- Department of Physics and Materials Research Laboratory, University of Illinois at Urbana-Champaign, 1110 West Green Street, Urbana, Illinois 61801-3080 (United States)
- Center for Microelectronic and Optical Materials Research, and Department of Electrical Engineering, University of Nebraska, Lincoln, Nebraska 68588-0511 (United States)
We present theoretical studies of the Raman spectra of heavily doped GaAs-Al{sub {ital x}}Ga{sub 1{minus}{ital x}}As multiple quantum wells in an attempt to understand the effects of heavy two-dimensional (2D) doping on the electronic structures and optical properties of semiconductors. Samples of GaAs-Al{sub {ital x}}Ga{sub 1{minus}{ital x}}As multiple quantum wells with {ital x}=0.2 and 0.4, well-barrier widths around 100 A, and 2D electron densities up to more than 1{times}10{sup 13} cm{sup {minus}2} are examined. Intersubband and intrasubband Raman plasmon modes are calculated with an energy-dependent effective-mass theory, which takes into account the band nonparabolicity. The screened external potential due to impurity and electron charge distribution including the exchange and correlation effects are calculated self-consistently within the local-density approximation. The resulting Raman spectra are found to be sensitive to the shape of the screened potential, and they are in qualitative agreement with experimental data. {copyright} {ital 1996 The American Physical Society.}
- OSTI ID:
- 388305
- Journal Information:
- Physical Review, B: Condensed Matter, Vol. 54, Issue 16; Other Information: PBD: Oct 1996
- Country of Publication:
- United States
- Language:
- English
Similar Records
Carrier relaxation in doped quantum wells
A study of non-equilibrium phonons in GaAs/AlAs quantum wells