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Title: Transport of electrons induced by highly charged Ni (74 MeV/u) and Cu (9.6 MeV/u) ions in carbon: A study of target-thickness-dependent electron yields

Journal Article · · Physical Review A
; ; ;  [1];  [2];  [3]
  1. Laboratoire Mixte CEA-CNRS, Centre Interdisciplinaire de Recherches avec les Ions Lourds, Boite Postale 5133, Rue Claude Bloch, F-14040 Caen Cedex (France)
  2. Department of Electrical and Computer Engineering, Aristotelian University of Thessaloniki, GR-54006 Thessaloniki (Greece)
  3. Institut fuer Kernphysik der J.-W. Goethe Universitaet, August-Euler-Strasse 6, D-60486 Frankfurt am Main (Germany)

We investigated the transport of heavy-ion-induced electrons in solids by both experiment and numerical simulation. We measured electron yields from the beam entrance and exit surfaces of thin carbon foils ({ital d}{approx_equal}3 {mu}g/cm{sup 2}{endash}50 mg/cm{sup 2}) bombarded with swift, highly charged Cu{sup {ital q}+} ({ital q}=25{endash}28 and {ital E}{sub {ital P}}=9.6 MeV/u) and Ni{sup {ital q}+} ({ital q}=26, 28 and {ital E}{sub {ital P}}=74 MeV/u) ions. We obtained the transport lengths of high-energy ({ital E}{approx_gt}100 eV) electrons and diffusion lengths of slow electrons ({ital E}{approx_lt}100 eV) and deduced a mean energy of the ejected electrons ({approx_equal}1 keV at 10 MeV/u and {approx_equal}8 keV at 74 MeV/u). The high-energy electrons represent a fraction of 15{endash}20{percent} of the total electron yields at 9.6 MeV/u, but up to 35{percent} at 74 MeV/u. We show that backscattering of fast, forward-emitted electrons towards the beam entrance surface cannot be neglected in fast-ion-induced electron emission. The experimental results are used as a benchmark for the improvement of our numerical simulation of the primary stage of the ion-matter interaction. {copyright} {ital 1996 The American Physical Society.}

OSTI ID:
388286
Journal Information:
Physical Review A, Vol. 54, Issue 5; Other Information: PBD: Nov 1996
Country of Publication:
United States
Language:
English

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