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Title: Compound Semiconductor Devices for Low-Power High-Efficiency Radio Frequency Electronics

Abstract

The power consumption of Radio Frequency (RF) electronics is a significant issue for Wireless systems. Since most wireless systems are portable and thus battery operated, reductions in DC power consumption can significantly reduce the weight and/or increase the battery lifetime of the system. As transmission consumes significantly more power than reception for most Wireless applications, previous efforts have been focused on increasing the efficiency of RF power amplification. These efforts have resulted in large increases in transmit efficiencies with research-grade amplifier efficiencies approaching 100%. In this paper, they describe their efforts on reducing power consumption of reception and other small signal RF functions. Additionally, recent power efficiency measurements on InP HEMT devices for transmission are presented. This work focuses on the needs of today's typical portable Wireless systems, which operate at frequencies up to several GHz.

Authors:
; ; ;
Publication Date:
Research Org.:
Sandia National Labs., Albuquerque, NM (US); Sandia National Labs., Livermore, CA (US)
Sponsoring Org.:
US Department of Energy (US)
OSTI Identifier:
3875
Report Number(s):
SAND98-2815C
TRN: AH200113%%49
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Conference
Resource Relation:
Conference: 195th Meeting of the Electrochemical Society, Seattle, WA (US), 05/02/1999--05/07/1999; Other Information: PBD: 18 Feb 1999
Country of Publication:
United States
Language:
English
Subject:
32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATION; RF SYSTEMS; AMPLIFIERS; ENERGY EFFICIENCY; SEMICONDUCTOR DEVICES; ENERGY CONSUMPTION; PORTABLE EQUIPMENT; ELECTRIC BATTERIES; DATA TRANSMISSION; INDIUM PHOSPHIDES

Citation Formats

Baca, A.G., Chang, P.C., Hietala, V.M., and Sloan, L.R. Compound Semiconductor Devices for Low-Power High-Efficiency Radio Frequency Electronics. United States: N. p., 1999. Web.
Baca, A.G., Chang, P.C., Hietala, V.M., & Sloan, L.R. Compound Semiconductor Devices for Low-Power High-Efficiency Radio Frequency Electronics. United States.
Baca, A.G., Chang, P.C., Hietala, V.M., and Sloan, L.R. Thu . "Compound Semiconductor Devices for Low-Power High-Efficiency Radio Frequency Electronics". United States. https://www.osti.gov/servlets/purl/3875.
@article{osti_3875,
title = {Compound Semiconductor Devices for Low-Power High-Efficiency Radio Frequency Electronics},
author = {Baca, A.G. and Chang, P.C. and Hietala, V.M. and Sloan, L.R.},
abstractNote = {The power consumption of Radio Frequency (RF) electronics is a significant issue for Wireless systems. Since most wireless systems are portable and thus battery operated, reductions in DC power consumption can significantly reduce the weight and/or increase the battery lifetime of the system. As transmission consumes significantly more power than reception for most Wireless applications, previous efforts have been focused on increasing the efficiency of RF power amplification. These efforts have resulted in large increases in transmit efficiencies with research-grade amplifier efficiencies approaching 100%. In this paper, they describe their efforts on reducing power consumption of reception and other small signal RF functions. Additionally, recent power efficiency measurements on InP HEMT devices for transmission are presented. This work focuses on the needs of today's typical portable Wireless systems, which operate at frequencies up to several GHz.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1999},
month = {2}
}

Conference:
Other availability
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