High temperature 4H-silicon carbide thyristors and power MOSFETs
- Cree Research, Inc., 2810 Meridian Parkway, Durham, North Carolina 27713 (United States)
Two types of high temperature power switches, MOSFETs and thyristors, have been demonstrated in 4H-SiC. Vertical UMOS power MOSFETs have been demonstrated to block voltages as high as 260 V with a specific on-resistance of 18 m{Omega}-cm{sup 2}. Larger area, 175 V MOSFETs had a rated current of 2 Amps (200 A/cm{sup 2}) at {ital V}{sub {ital d}}=2.65 V. Previous 4H-SiC UMOS MOSFETs were measured to operate up to 573 K. 4H-SiC npnp thyristors have been successfully operated up to 773 K, and have achieved blocking voltages of 600 V and an on-current of 1.8 A. Larger area, 200 V thyristors had a rated current of 10 Amps (620 A/cm{sup 2}) with a voltage drop of 3.6 V. Current densities as high as 1000 A/cm{sup 2} at {minus}4.0 V has also been achieved. The thyristors have also shown very fast turn-off times, ranging from 360{endash}640 nsec. {copyright} {ital 1996 American Institute of Physics.}
- OSTI ID:
- 385498
- Report Number(s):
- CONF-960109-; ISSN 0094-243X; TRN: 9618M0100
- Journal Information:
- AIP Conference Proceedings, Vol. 361, Issue 1; Conference: STAIF 96: space technology and applications international forum, Albuquerque, NM (United States), 7-11 Jan 1996; Other Information: PBD: Mar 1996
- Country of Publication:
- United States
- Language:
- English
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