High-resolution angle-resolved photoemission spectroscopy of CeBi
- Department of Physics, Tohoku University, Sendai 980-77 (Japan)
- Department of Quantum Engineering and Systems Science, Faculty of Engineering, The University of Tokyo, Tokyo 113 (Japan)
High-resolution angle-resolved photoemission spectroscopy (HR-ARPES) has been performed on a CeBi single crystal to study the complicated electronic structure near the Fermi level ({ital E}{sub {ital F}}). The experimental result was compared with the band-structure calculation based on the {ital p}-{ital f} mixing model as well as the de Haas{endash}van Alphen (dHvA) effect measurements. It was found that the overall feature of the valence band shows a remarkably good agreement between the experiment and the calculation, suggesting the essential validity of the {ital p}-{ital f} mixing model. HR-ARPES measurement near {ital E}{sub {ital F}} has established the existence of a small electron pocket centered at the {ital M} point in the Brillouin zone, supporting the band calculation and the dHvA measurement. HR-ARPES spectra around the {Gamma} point show some dispersive bands near {ital E}{sub {ital F}} indicative of a hole pocket centered at the {Gamma} point, though it was not so clearly resolved as the electron pocket due to close proximity of individual bands. These results are consistent with the semimetallic nature of CeBi. The observed quantitative discrepancy between the experiment and the calculation is discussed. {copyright} {ital 1996 The American Physical Society.}
- OSTI ID:
- 383844
- Journal Information:
- Physical Review, B: Condensed Matter, Vol. 54, Issue 13; Other Information: PBD: Oct 1996
- Country of Publication:
- United States
- Language:
- English
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